P-Channel Switch
www.DataSheet4U.com
MMBFJ271 P-Channel Switch
June 2006
MMBFJ271
P-Channel Switch
Features
• This device is designed ...
Description
www.DataSheet4U.com
MMBFJ271 P-Channel Switch
June 2006
MMBFJ271
P-Channel Switch
Features
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.
S D G
tm
SOT-23
Mark : 62T
Absolute Maximum Ratings *
Symbol
VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
Ta = 25°C unless otherwise noted
Parameter
Value
-30 30 50 -55 ~ 150
Units
V V mA °C
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. - These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RθJA
Parameter
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Value
225 1.8 556
Units
mW mW/°C °C/W
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
Symbol Parameter Off Characteristics (Note3)
V(BR)GSS IGSS VGS(off)
TC = 25°C unless otherwise noted
Test Condition
MIN
MAX
Units
Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage
IG = 1.0µA, VDS = 0 VGS = 20V, VDS = 0 VDS = -15V, ID = -1.0nA
30 200 1.5 4.5
V pA V
On Characteristics (Note3)
IDSS gfs goss Zero-Gate Voltage Drain Current * Forward Transferconductance VDS = -15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz -6.0 8000...
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