MRF5S19090HSR3 Datasheet - Freescale Semiconductor





MRF5S19090HSR3 Datasheet - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19090HSR3   MRF5S19090HSR3  

Datasheet: MRF5S19090HSR3 datasheet

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Description: www.DataSheet4U.com Freescale Semicondu ctor Technical Data Document Number: M RF5S19090H Rev. 2, 5/2006 RF Power Fie ld Effect Transistors N - Channel Enha ncement - Mode Lateral MOSFETs Designed for PCN and PCS base station applicati ons with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multic arrier amplifier applications. • Typi cal 2 - Carrier N - CDMA Performance: V DD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., Full Frequency Band, IS - 9 5 CDMA (Pilot, Sync, Paging, Traffic Co des 8 Through 13) Channel Bandwidth = 1 .2288 MHz. PAR = 9.8 dB @ 0.01% Probabi lity on CCDF. Power Gain — 14.5 dB Dr ain Efficiency — 25.8% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth


Manufacture Part Number Description

Freescale Semiconductor

MRF5S19090HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs




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