MRF5S19100HSR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13.9 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 50.7 dBc in 30 kHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Low Gold Plating Thickness on Leads, 40μ″ Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S19100HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Volta...