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MRF5S19130HSR3 Dataheets PDF



Part Number MRF5S19130HSR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF5S19130HSR3 DatasheetMRF5S19130HSR3 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Tr.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.5, +65 - 0.5, +15 438 2.50 - 65 to +150 150 200 160 1 Unit Vdc Vdc W W/°C °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 115 W CW Case Temperature 78°C, 26 W CW Symbol RθJC Value (1,2) 0.40 0.46 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S19130HR3 MRF5S19130HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.8 3.8 0.26 7.5 3.5 — — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 26 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 12 23 — — — 13 25 - 37 - 51 - 15 — — - 35 - 48 -9 dB % dBc dBc dB MRF5S19130HR3 MRF5S19130HSR3 2 RF Device Data Freescale Semiconductor B1 R1 VBIAS + C10 R2 + C9 C6 C7 C8 C15 Z13 RF INPUT Z10 Z1 C1 C2 C3 C4 C5 B2 + C11 C12 C14 R4 C13 C26 C27 C28 C29 C30 + C31 + C32 + C33 + C34 Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z14 DUT Z12 Z15 Z16 Z17 Z18 Z19 Z20 Z21 C25 RF OUTPUT Z22 Z23 Z24 R3 + C16 C17 C18 C19 C20 + C21 + C22 + C23 VSUPPLY + C24 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10, Z11 Z12 0.200″ x 0.085″ Microstrip 0.170″ x 0.085″ Microstrip 0.480″ x 0.085″ Microstrip 0.926″ x 0.085″ Microstrip 0.590″ x 0.085″ Microstrip 0.519″ x 0.955″ x 0.160″ Taper 0.022″ x 0.955″ Microstrip 0.046″ x 0.955″ Microstrip 0.080″ x 0.955″ Microstrip 1.280″ x 0.046″ Microstrip 0.053″ x 1.080″ Microstrip Z13, Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 1.125″ x 0.068″ Microstrip 0.071″ x 1.080″ Microstrip 0.060″ x 1.080″ Microstrip 0.290″ x 1.080″ Microstrip 1.075″ x 0.825″ x 0.125″ Taper 0.635″ x 0.120″ Microstrip 0.185″ x 0.096″ Microstrip 0..


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