MRF5S19150SR3 Datasheet - Motorola

MRF5S19150SR3 Datasheet - RF Power Field Effect Transistors

MRF5S19150SR3   MRF5S19150SR3  

Datasheet: MRF5S19150SR3 datasheet

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Description: MOTOROLA SEMICONDU CTOR TECHNICAL DATA Freescale Semicond uctor, Inc. Order this document by MRF 5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN a nd PCS base station applications at fre quencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifi er applications. • Typical 2 - Carrie r N - CDMA Performance for VDD = 28 Vol ts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Cod es 8 Through 13) 1.2288 MHz Channel Ban dwidth Carrier. Adjacent Channels Measu red over a 30 kHz Bandwidth at f1 - 88

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RF Power Field Effect Transistors

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