NZT902

www.DataSheet4U.com NZT902 NPN Low Saturation Transistor September 2006 NZT902 NPN Low Saturation Transistor 4 tm These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol VCEO VCBO VEBO IC TJ TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Range - Continuous Value 90 120 5 3 150 - 55 ~ +150 Units V V V A °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T =25°C unless otherwise noted a Symbol PD RθJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Value 1 125 Units W °C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. Electrical Characteristics* Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Test Conditions IC = 10mA IC = 100µA IE = 100µA VCB = 100V VC...