RF101L4S

www.DataSheet4U.com RF101L4S Diodes Fast recovery diode RF101L4S zApplications General rectification zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Ultra high switching speed 4) Low switching loss zConstructure Silicon epitaxial planar zDimensions (Unit : mm) zLand size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 1.5±0.2 2.0±0.2 5.0±0.3 6 6 4.5±0.2 1.2±0.3 PMDS ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date zStructure zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 400 400 1 20 150 -55 to +150 5.3±0.1 　 0.05 9.5±0.1 12±0.2 Unit V V A A ℃ ℃ (*1)Mounting on epoxy board. 180°Half sine wave zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 1.25 10 25 Unit V µA ns Conditions IF=1.0A VR=400V IF=0.5A,IR=1A,Irr=0.25*IR trr 4.2 1/3 RF101L4S Diodes zElectrical characteristic curves 1 10000 Ta=150℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=125℃ Ta=75℃ Ta=25℃ 10 Ta=-25℃ 100 f=1MHz 100 10 1 0.001 0 200 400 600 800 1000 1200 FORWARD VOLTAGE：VF(m...