STTH212

STTH212 High voltage ultrafast diode Datasheet - production data A K A K SMB A K SMC Features  Low forward voltage drop  High reliability  High surge current capability  Soft switching for reduced EMI disturbances  Planar technology Description This device is an ultrafast diode based on a high voltage planar technology, it is perfectly suited for freewheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. Housed in SMB and SMC packages, this diode reduces the losses in high switching frequency operations. Table 1: Device summary Symbol Value IF(AV) VRRM Tj VF (typ.) trr (max.) 2A 1200 V 175 °C 1.0 V 75 ns June 2017 DocID11497 Rev 2 This is information on a product in full production. 1/11 www.st.com Characteristics STTH212 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V V(RMS) RMS voltage 850 V IF(AV) Average forward current δ = 0.5, square wave SMB Tlead = 90 °C SMC Tlead = 105 °C 2 A IF(RMS) RMS forward current IFSM Forward surge current tp = 8.3 ms 10 A 40 Tstg Storage temperature range Tj Maximum operating junction temperature -50 to +175 °C 175 °C Symbol Rth(j-l) Junction to lead Table 3: Thermal parameters Parameter SMB SMC Maximum 25 20 Unit °C/W Symbol IR VF Table 4: Static electrical characteristics (per diode) Parameter Test ...