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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FS18KM-10A FS18KM-10A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS18KM-10A
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
➀ ➁ ➂ ➁
2.6 ± 0.2
G 10V DRIVE G VDSS ............................................................................... 500V G rDS (ON) (MAX) .............................................................. 0.40Ω G ID ......................................................................................... 18A
➀
➀ GATE ➁ DRAIN ➂ SOURCE ➂
TO-220FN
APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso —
(Tc = 25° C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200µH VGS = 0V VDS = 0V
Conditions
Ratings 500 ± 30 18 54 18 40 –55 ~ +150 –55 ~ +150
4.5 ± 0.2
Unit V V A A A W °C °C V g Sep. 2001
AC for 1minute, Terminal to case Typical value
2000 2.0
MITSUBISHI Nch POWER MOSFET
FS18KM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS I GSS I DSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss t d (on) tr t d (off) tf VSD Rth (ch-c) Parameter
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 500 ± 30 — — 2.5 — — 9.6 — — — — — — — — — Typ. — — — — 3.0 0.30 2.70 16.0 2350 240 50 35 55 310 70 1.5 — Max. — — ± 10 1 3.5 0.40 3.60 — — — — — — — — 2.0 3.13
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 9A, VGS = 10V, R GEN = RGS = 50Ω
IS = 9A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2
40
tw = 10µs 100µs 1ms
10 ms
101
7 5 3 2 7 5 3 2
30
100
TC = 25°C Single Pulse
20
10
10–1
7 5 3 2
DC
0
0
50
100
150
200
2 3
5 7 101
2 3
5 7 102
2 3
5 7
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50
PD = 40W VGS = 20V,10V,8V,6V
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V,10V,6V 5V
DRAIN CURRENT ID (A)
40
TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
16.