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FS18KM-10A Dataheets PDF



Part Number FS18KM-10A
Manufacturers Mitsubishi Electric
Logo Mitsubishi Electric
Description Nch POWER MOSFET
Datasheet FS18KM-10A DatasheetFS18KM-10A Datasheet (PDF)

www.DataSheet4U.com MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS18KM-10A FS18KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-10A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ➀ ➁ ➂ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS .... 500V G rDS (ON) (MAX) ...

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www.DataSheet4U.com MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS18KM-10A FS18KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-10A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ➀ ➁ ➂ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS ............................................................................... 500V G rDS (ON) (MAX) .............................................................. 0.40Ω G ID ......................................................................................... 18A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25° C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200µH VGS = 0V VDS = 0V Conditions Ratings 500 ± 30 18 54 18 40 –55 ~ +150 –55 ~ +150 4.5 ± 0.2 Unit V V A A A W °C °C V g Sep. 2001 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS18KM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS I GSS I DSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss t d (on) tr t d (off) tf VSD Rth (ch-c) Parameter (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V IGS = ± 100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 ± 30 — — 2.5 — — 9.6 — — — — — — — — — Typ. — — — — 3.0 0.30 2.70 16.0 2350 240 50 35 55 310 70 1.5 — Max. — — ± 10 1 3.5 0.40 3.60 — — — — — — — — 2.0 3.13 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 9A, VGS = 10V, R GEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 40 tw = 10µs 100µs 1ms 10 ms 101 7 5 3 2 7 5 3 2 30 100 TC = 25°C Single Pulse 20 10 10–1 7 5 3 2 DC 0 0 50 100 150 200 2 3 5 7 101 2 3 5 7 102 2 3 5 7 CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 50 PD = 40W VGS = 20V,10V,8V,6V DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,6V 5V DRAIN CURRENT ID (A) 40 TC = 25°C Pulse Test DRAIN CURRENT ID (A) 16.


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