HAT2058R Datasheet PDF - Renesas Technology

HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate ...

HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 2 4 G G S1 MOS1 S3 MOS2 Preliminary REJ03G1174-0300 Rev.3.00 Aug 25, 2009 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings Item Symbol Value Drain to source voltage VDSS 100 Gate to source voltage Drain current Drain peak current VGSS ID Note 2 ID (pulse) Note 1 ±20 4 32 Body-drain diode reverse drain current IDR 4 Avalanche current IAP Note 4 — Avalanche energy EAR Note 4 — Channel dissipation Pch Note 2 2 Pch Note 3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω (Ta = 25°C) Unit V V A A A A mJ W W °C °C REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 1 of 7 HAT2058R Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to ...