P-Channel MOSFET
P-Channel 30-V (D-S) MOSFET
Si4425BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.012 at VGS = - 10...
Description
P-Channel 30-V (D-S) MOSFET
Si4425BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.012 at VGS = - 10 V 0.019 at VGS = - 4.5 V
ID (A) - 11.4 - 9.1
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free) Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switches - Notebook PCs - Desktop PCs
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 11.4 - 9.1
- 8.8 - 7.0
Pulsed Drain Current
IDM - 50
Continuous Source Current (Diode Conduction)a
IS
- 2.1
- 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
PD
2.5 1.6
1.5 0.9
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State
Symbol RthJA RthJF
Typical 40 70 15
Maximum 50 85 18
Unit °C/W
Document Number: 72000 S09-0767-Rev. E, 04-May-09
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Si4425BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symb...
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