2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics ...
2SA1810
Silicon
PNP Epitaxial
Application
High frequency amplifier
Features
Excellent high frequency characteristics fT = 300 MHz typ
High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ
Suitable for wide band video amplifier
Outline
TO-126 MOD
123
1. Emitter 2. Collector 3. Base
2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation
Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg
Ratings –200 –200 –5 –0.2 –0.5 1.25 10 150 –55 to +150
Unit V V V A A W
°C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown voltage
V(BR)CBO
–200
—
Collector to emitter breakdown V(BR)CEO voltage
–200
—
Emitter to base breakdown voltage
V(BR)EBO
–5
—
Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage
I CBO hFE*1 VBE VCE(sat)
— 60 — —
— — — —
Gain bandwidth product Collector output capacitance
fT Cob
200 300 — 5.0
Note: 1. The 2SA1810 is grouped by hFE as follows.
Max Unit Test conditions
—V
IC = –10 µA, IE = 0
—V
IC = –1 mA, RBE = ∞
—V
IE = –10 µA, IC = 0
–10 µA 200 –1.0 V –1.0 V
VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –30 mA IC = –30 mA, IB = –3 mA
— MHz VCE = –20 V, IC = –30 mA — pF VCB = –30 V...