A1810

2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings –200 –200 –5 –0.2 –0.5 1.25 10 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Collector to base breakdown voltage V(BR)CBO –200 — Collector to emitter breakdown V(BR)CEO voltage –200 — Emitter to base breakdown voltage V(BR)EBO –5 — Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage I CBO hFE*1 VBE VCE(sat) — 60 — — — — — — Gain bandwidth product Collector output capacitance fT Cob 200 300 — 5.0 Note: 1. The 2SA1810 is grouped by hFE as follows. Max Unit Test conditions —V IC = –10 µA, IE = 0 —V IC = –1 mA, RBE = ∞ —V IE = –10 µA, IC = 0 –10 µA 200 –1.0 V –1.0 V VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –30 mA IC = –30 mA, IB = –3 mA — MHz VCE = –20 V, IC = –30 mA — pF VCB = –30 V...