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Switching Applications. 2SJ612 Datasheet

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Switching Applications. 2SJ612 Datasheet






2SJ612 Applications. Datasheet pdf. Equivalent




2SJ612 Applications. Datasheet pdf. Equivalent





Part

2SJ612

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : E NN7178A 2SJ612 P-Channel Silicon MOSFE T 2SJ612 Ultrahigh-Speed Switching App lications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ612] 4.5 1.6 1.5 Low ON-resistanc e. Ultrahigh-speed switching. 2.5V driv e. 0.5 3 1.5 2 3.0 1 1.0 0.4 2. 5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Sou.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SJ612 Datasheet


Sanyo Semicon Device 2SJ612

2SJ612; rce SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren t (Pulse) Allowable Power Dissipation C hannel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW 10µs, duty cycle≤1% Mounted on a c eramic board (250mm2!0.8mm) Tc=25°C Co nditions Ratings --20 ± .


Sanyo Semicon Device 2SJ612

10 --2.5 --10 1.0 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Ch aracteristics at Ta=25°C Parameter Dra in-to-Source Breakdown Voltage Zero-Gat e Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sou rce On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1.


Sanyo Semicon Device 2SJ612

mA, VGS=0 VDS=--20V, VGS=0 VGS=± 8V, VD S=0 VDS=--10V, ID=--1mA VDS=--10V, ID=- 1.3A ID=-1.3A, VGS=--4V ID=-0.7A, VGS=- -2.5V Ratings min --20 --1 ± 10 --0.4 2.0 2.8 190 250 245 350 --1.3 typ max U nit V µA µA V S mΩ mΩ Marking : JS Continued on next page. Any and al l SANYO products described or contained herein do not have specifications that can handle applications t.

Part

2SJ612

Description

Ultrahigh-Speed Switching Applications



Feature


www.DataSheet4U.com Ordering number : E NN7178A 2SJ612 P-Channel Silicon MOSFE T 2SJ612 Ultrahigh-Speed Switching App lications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ612] 4.5 1.6 1.5 Low ON-resistanc e. Ultrahigh-speed switching. 2.5V driv e. 0.5 3 1.5 2 3.0 1 1.0 0.4 2. 5 4.25max 0.4 (Bottom view) 0.75 1 : Gate 2 : Drain 3 : Sou.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SJ612 Datasheet




 2SJ612
Ordering number : ENN7178A
www.DataSheet4U.com
2SJ612
P-Channel Silicon MOSFET
2SJ612
Preliminary
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2062A
[2SJ612]
4.5
1.6
1.5
Specifications
Absolute Maximum Ratings at Ta=25°C
0.4 0.5
3 1.5 2
1
3.0
(Bottom view)
0.75
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
--20
±10
--2.5
--10
1.0
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : JS
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.3A
ID=--1.3A, VGS=--4V
ID=--0.7A, VGS=--2.5V
min
--20
--0.4
2.0
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--1.3 V
2.8 S
190 245 m
250 350 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1502 TS IM TA-3870 / 41002 TS IM TA-3522 No.7178-1/4




 2SJ612
2SJ612
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--2.5A
VDS=--10V, VGS=--4V, ID=--2.5A
VDS=--10V, VGS=--4V, ID=--2.5A
IS=--2.5A, VGS=0
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --10V
ID= --1.3A
RL=7.69
D VOUT
P.G
2SJ612
50S
Ratings
min typ max
Unit
290 pF
40 pF
25 pF
10 ns
60 ns
27 ns
32 ns
3.2 nC
0.8 nC
0.6 nC
--0.96
--1.5 V
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
600
ID -- VDS
VGS= --1.5V
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02654
RDS(on) -- VGS
Tc=25°C
500
400
300
--1.3A
ID= --0.7A
200
100
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS -- V IT04255
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
500
ID -- VGS
VDS= --10V
--0.5
--1.0
--1.5
--2.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
--2.5
IT04254
400
300
200
I
DI=D-=-0-.-71A.3,AV,
GS= --2.5V
VGS= --4.0V
100
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT04256
No.7178-2/4




 2SJ612
2SJ612
10 yfs-- ID
VDS= --10V
7
5
3
2
1.0
7
5
Tc= --25°C
75°C
25°C
3
2
0.1
--0.01
2 3 5 7 --0.1
2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
100
VDD= --10V
7 VGS= --4V
5 td(off)
23
IT04257
3
tf
2
tr
td(on)
10
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
1000
7
5
3
2
100
7
5
73
52
IF -- VSD
VGS=0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V IT04258
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Coss
Crss
3
3 5 7 --0.1
2 3 5 7 --1.0
--4
VDS= --10V
Drain Current, ID -- A
VGS -- Qg
ID= --2.5A
--3
23 5
IT02660
--2
--1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Total Gate Charge, Qg -- nC
IT04259
PD -- Ta
1.2
10
0
--5 --10 --15 --20
Drain-to-Source Voltage, VDS -- V IT02661
ASO
2
--10 IDP= --10A
7
5
3 ID= --2.5A
2
--1.0
7
5 Operation in this area
<10µs
DC op1e0r01atm0ioms1nsms100µs
3 is limited by RDS(on).
2
--0.1
7
5
3 Tc=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(250mm2!0.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
Drain-to-Source Voltage, VDS -- V
PD -- Tc
4.0
23
IT04260
1.0
0.8
0.6
0.4
0.2
Mounted on a ceramic board(250mm 2!0.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04261
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT04262
No.7178-3/4



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