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2SJ612 Datasheet, Equivalent, Switching Applications.Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications |
| Part | 2SJ612 |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number : E NN7178A 2SJ612 P-Channel Silicon MOSFE T 2SJ612 Ultrahigh-Speed Switching App lications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ612] 4. 5 1. 6 1. 5 Low ON-resistanc e. Ultrahigh-speed switching. 2. 5V driv e. 0. 5 3 1. 5 2 3. 0 1 1. 0 0. 4 2. 5 4. 25max 0. 4 (Bottom view) 0. 75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratin gs at Ta=25°C Parameter Drain-to-Sourc e Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allo wable Power Dissipation Channel Tempera ture Storage Temperat . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 2SJ612 |
|---|---|
| Description | Ultrahigh-Speed Switching Applications |
| Feature | www. DataSheet4U. com Ordering number : E NN7178A 2SJ612 P-Channel Silicon MOSFE T 2SJ612 Ultrahigh-Speed Switching App lications Preliminary Features • • • Package Dimensions unit : mm 2062A [2SJ612] 4. 5 1. 6 1. 5 Low ON-resistanc e. Ultrahigh-speed switching. 2. 5V driv e. 0. 5 3 1. 5 2 3. 0 1 1. 0 0. 4 2. 5 4. 25max 0. 4 (Bottom view) 0. 75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratin gs at Ta=25°C Parameter Drain-to-Sourc e Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allo wable Power Dissipation Channel Tempera ture Storage Temperat . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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