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KDZ4.7B
Diodes
Zener diode
KDZ4.7B
zApplications Voltage regulation zDimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
zLand size figure (Unit : mm)
1.2 0.85
zFeatures 1) Small power mold type. (PMDU) 2) High ESD tolerance
2.6±0.1 3.5±0.2
①
PMDU
zConstruction Silicon epitaxial planar
0.9±0.1
zStructure
0.8±0.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
EX. KDZ10B
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1 1.5MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter Power dissipation Junction temperature Storage temperature
Symbol P Tj Tstg
Limits 1000 150 -55 to +150
Unit mW ℃ ℃
Rev.A
3.05
1/4
KDZ4.7B
Diodes
zElectrical characteristics (Ta=25°C)
Symbol TYP. KDZ 3.6B KDZ 3.9B KDZ 4.3B KDZ 4.7B KDZ 5.1B KDZ 5.6B KDZ 6.2B KDZ 6.8B KDZ 7.5B KDZ 8.2B KDZ 9.1B KDZ 10B KDZ 11B KDZ 12B KDZ 13B KDZ 15B KDZ 16B KDZ 18B KDZ 20B KDZ 22B KDZ 24B KDZ 27B KDZ 30B KDZ 33B KDZ 36B MIN. 3.600 3.900 4.300 4.700 5.100 5.600 6.200 6.800 7.500 8.200 9.100 10.000 11.000 12.000 13.300 14.700 16.200 18.000 20.000 22.000 24.000 27.000 30.000 33.000 36.000
Zener voltage:Vz(V)
Reverse current:IR(μA)
TYP. 3.813 4.136 4.572 4.924 5.368 5.856 6.509 7.280 7.889 8.655 9.747 10.310 11.510 12.500 13.820 15.350 16.860 19.000 20.820 23.850 25.310 28.700 31.570 34.950 39.240
MAX. 4.000 4.400 4.800 5.200 5.700 6.300 7.000 7.700 8.400 9.300 10.200 11.200 12.300 13.500 15.000 16.500 18.300 20.300 22.400 24.500 27.600 30.800 34.000 37.000 40.000
Iz(mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10
MAX. 60 40 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10
VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
(1)The Zener voltage (Vz) is measured 40ms after power is supplied. (2)The operating resistances (Zz、Zzk) are measured by superimposing a minute alternating current on the regulated current (Iz).
zMarking (TYPE NO.)
TYPE KDZ 3.6B KDZ 3.9B KDZ 4.3B KDZ 4.7B KDZ 5.1B KDZ 5.6B KDZ 6.2B KDZ 6.8B KDZ 7.5B KDZ 8.2B KDZ 9.1B KDZ 10B KDZ 11B TYPE NO.
GB HB JB KB LB MB NB PB QB RB SB TB UB
TYPE KDZ 12B KDZ 13B KDZ 15B KDZ 16B KDZ 18B KDZ 20B KDZ 22B KDZ 24B KDZ 27B KDZ 30B KDZ 33B KDZ 36B
TYPE NO.
VB WB XB YB ZB AD BD CD DD ED FD GD
Rev.A
2/4
KDZ4.7B
Diodes
100 5.1 4.7 4.3 10 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36
ZENER CURRENT:Iz(mA)
1
0.1
0.01
0.001 0 5 10 15 20 25 30 35 40 45
ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS
1200 POWER DISSIPATION:Pd(mW) 1000 800 600 400 200 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 0.12 0.1 TEMP.COEFFICIENCE:γz(%/℃) 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 0 10 20 30 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS 40 15 10 5 0 -5 40 35 30 25 20
10000 PRSM t
REVERSE SURGE MAXIMUM POWER:PRSM(W)
1000
100
10
1 0.001
0.01
0.1
1
10
100
TIME:t(ms) PRSM-TIME CHARACTERISTICS 1000
Mounted on epoxy board IM=10mA IF=100mA
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
TEMP.COEFFICIENCE:γz(mV/℃)
1ms
time
Rth(j-a)
100
300us
10
Rth(j-c)
1 0.001
10 TIME:t(s) Rth-t CHARACTERISTICS
0.1
1000
Rev.A
3/4
KDZ4.7B
Diodes
zElectrical characteristic curves (Ta=25°C)
100 Ta=75℃ Ta=125℃ 1 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=150℃ Ta=125℃ 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 REVERSE CURRENT:IR(nA) 100 10 1
ZENER CURRENT:Iz(mA)
10
Ta=75℃ Ta=25℃
1000
0.1
0.1 0.01 0.001 0.0001 Ta=-25℃
0.01
0.001 0 1 2 3 4 5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 6
100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0 0.2 0.4 0.6 0.8 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1
5.2 5.1 5 4.9 4.8 4.7 Ta=25℃ IZ=5mA n=30pcs
1 0.9 REVERSE CURRENT:IR(nA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Vz DISPERSION MAP IR DISPERSION MAP AVE:0.119nA Ta=25℃ VR=1.0V n=30pcs
1100 1090 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1080 1070 1060 1050 1040 1030 1020 1010 1000 Ct DISPERSION MAP AVE:1070.0pF Ta=25℃ f=1MHz VR=0V n=10pcs
ZENER VOLTAGE:Vz(V)
AVE:4.680V
10000 DYNAMIC IMPEDANCE:Zz(Ω) ELECTROSTATIC DISCHARGE TEST ESD(KV)
30
No break at 30kV
25 20 15 10 5 0 C=200pF R=0Ω
C=100pF R=1.5k
1000
100
10
C=150pF R=330Ω
1 0.1 1 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS 10
ESD DISPERSION MAP
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits.