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KDZ8.2B Dataheets PDF



Part Number KDZ8.2B
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description (KDZx.xB) Zener diode
Datasheet KDZ8.2B DatasheetKDZ8.2B Datasheet (PDF)

www.DataSheet4U.com KDZ4.7B Diodes Zener diode KDZ4.7B zApplications Voltage regulation zDimensions (Unit : mm) 1.6±0.1 0.1±0.1     0.05 zLand size figure (Unit : mm) 1.2 0.85 zFeatures 1) Small power mold type. (PMDU) 2) High ESD tolerance 2.6±0.1 3.5±0.2 ① PMDU zConstruction Silicon epitaxial planar 0.9±0.1 zStructure   0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date EX. KDZ10B zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.

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www.DataSheet4U.com KDZ4.7B Diodes Zener diode KDZ4.7B zApplications Voltage regulation zDimensions (Unit : mm) 1.6±0.1 0.1±0.1     0.05 zLand size figure (Unit : mm) 1.2 0.85 zFeatures 1) Small power mold type. (PMDU) 2) High ESD tolerance 2.6±0.1 3.5±0.2 ① PMDU zConstruction Silicon epitaxial planar 0.9±0.1 zStructure   0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date EX. KDZ10B zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation Junction temperature Storage temperature Symbol P Tj Tstg Limits 1000 150 -55 to +150 Unit mW ℃ ℃ Rev.A 3.05 1/4 KDZ4.7B Diodes zElectrical characteristics (Ta=25°C) Symbol TYP. KDZ 3.6B KDZ 3.9B KDZ 4.3B KDZ 4.7B KDZ 5.1B KDZ 5.6B KDZ 6.2B KDZ 6.8B KDZ 7.5B KDZ 8.2B KDZ 9.1B KDZ 10B KDZ 11B KDZ 12B KDZ 13B KDZ 15B KDZ 16B KDZ 18B KDZ 20B KDZ 22B KDZ 24B KDZ 27B KDZ 30B KDZ 33B KDZ 36B MIN. 3.600 3.900 4.300 4.700 5.100 5.600 6.200 6.800 7.500 8.200 9.100 10.000 11.000 12.000 13.300 14.700 16.200 18.000 20.000 22.000 24.000 27.000 30.000 33.000 36.000 Zener voltage:Vz(V) Reverse current:IR(μA) TYP. 3.813 4.136 4.572 4.924 5.368 5.856 6.509 7.280 7.889 8.655 9.747 10.310 11.510 12.500 13.820 15.350 16.860 19.000 20.820 23.850 25.310 28.700 31.570 34.950 39.240 MAX. 4.000 4.400 4.800 5.200 5.700 6.300 7.000 7.700 8.400 9.300 10.200 11.200 12.300 13.500 15.000 16.500 18.300 20.300 22.400 24.500 27.600 30.800 34.000 37.000 40.000 Iz(mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 MAX. 60 40 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 VR(V) 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 (1)The Zener voltage (Vz) is measured 40ms after power is supplied. (2)The operating resistances (Zz、Zzk) are measured by superimposing a minute alternating current on the regulated current (Iz). zMarking (TYPE NO.) TYPE KDZ 3.6B KDZ 3.9B KDZ 4.3B KDZ 4.7B KDZ 5.1B KDZ 5.6B KDZ 6.2B KDZ 6.8B KDZ 7.5B KDZ 8.2B KDZ 9.1B KDZ 10B KDZ 11B TYPE NO. GB HB JB KB LB MB NB PB QB RB SB TB UB TYPE KDZ 12B KDZ 13B KDZ 15B KDZ 16B KDZ 18B KDZ 20B KDZ 22B KDZ 24B KDZ 27B KDZ 30B KDZ 33B KDZ 36B TYPE NO. VB WB XB YB ZB AD BD CD DD ED FD GD Rev.A 2/4 KDZ4.7B Diodes 100 5.1 4.7 4.3 10 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 ZENER CURRENT:Iz(mA) 1 0.1 0.01 0.001 0 5 10 15 20 25 30 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1200 POWER DISSIPATION:Pd(mW) 1000 800 600 400 200 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Pd-Ta CHARACTERISTICS 0.12 0.1 TEMP.COEFFICIENCE:γz(%/℃) 0.08 0.06 0.04 0.02 0 -0.02 -0.04 -0.06 -0.08 0 10 20 30 ZENER VOLTAGE:Vz(V) γz-Vz CHARACTERISTICS 40 15 10 5 0 -5 40 35 30 25 20 10000 PRSM t REVERSE SURGE MAXIMUM POWER:PRSM(W) 1000 100 10 1 0.001 0.01 0.1 1 10 100 TIME:t(ms) PRSM-TIME CHARACTERISTICS 1000 Mounted on epoxy board IM=10mA IF=100mA TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) TEMP.COEFFICIENCE:γz(mV/℃) 1ms time Rth(j-a) 100 300us 10 Rth(j-c) 1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 Rev.A 3/4 KDZ4.7B Diodes zElectrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ 1 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=150℃ Ta=125℃ 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 REVERSE CURRENT:IR(nA) 100 10 1 ZENER CURRENT:Iz(mA) 10 Ta=75℃ Ta=25℃ 1000 0.1 0.1 0.01 0.001 0.0001 Ta=-25℃ 0.01 0.001 0 1 2 3 4 5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 6 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0 0.2 0.4 0.6 0.8 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 5.2 5.1 5 4.9 4.8 4.7 Ta=25℃ IZ=5mA n=30pcs 1 0.9 REVERSE CURRENT:IR(nA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Vz DISPERSION MAP IR DISPERSION MAP AVE:0.119nA Ta=25℃ VR=1.0V n=30pcs 1100 1090 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1080 1070 1060 1050 1040 1030 1020 1010 1000 Ct DISPERSION MAP AVE:1070.0pF Ta=25℃ f=1MHz VR=0V n=10pcs ZENER VOLTAGE:Vz(V) AVE:4.680V 10000 DYNAMIC IMPEDANCE:Zz(Ω) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5k 1000 100 10 C=150pF R=330Ω 1 0.1 1 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS 10 ESD DISPERSION  MAP Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits.


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