FDB8442

www.DataSheet4U.com FDB8442 N-Channel PowerTrench® MOSFET November 2006 FDB8442 N-Channel PowerTrench® MOSFET 40V, 80A, 2.9mΩ Features „ Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 181nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant REE I DF Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architectures and VRMs „ Primary Switch for 12V Systems ©2006 Fairchild Semiconductor Corporation FDB8442 Rev. A LE A M ENTATIO LE N MP 1 www.fairchildsemi.com FDB8442 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC<158 oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 1) Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Parameter Ratings 40 ±20 80 28 See Figure 4 720 254 1.7 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-263, lin2 copper pad area 0.59 43 oC/W oC/W Package Marking and Ordering Information Device Marking FDB8442 Device FDB8442 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity...