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RMPA1967

Fairchild Semiconductor

CDMA2000-1X and WDCMA Power Edge Power Amplifier Module

www.DataSheet4U.com RMPA1967 US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge™ Power Amplifier Module May 2005 RMPA1967 ...


Fairchild Semiconductor

RMPA1967

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www.DataSheet4U.com RMPA1967 US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge™ Power Amplifier Module May 2005 RMPA1967 US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge™ Power Amplifier Module Features ■ Single positive-supply operation and low power and shutdown modes ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant, LCC package(3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50 Ohms and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance requirements ■ Meets HSDPA performance requirements ■ Alternative pin-out to Fairchild RMPA1965 General Description The RMPA1967 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2-stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vref 1 DC Bias Control Vmode 2 Input Match Output Match 7 GND 8 GND RF IN 3 6 RF OUT Vcc1 4 5 Vcc2 (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com RMPA1967 Rev. F RMPA1967 US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge™ Power Amplifier Module Absolute Ratings1 Parameter Supply Vol...




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