RMPA1966

www.DataSheet4U.com PRELIMINARY RMPA1966 i-Lo™ WCDMA Band II Power Amplifier Module, 1850–1910 MHz June 2006 RMPA1966 i-Lo™ WCDMA Band II Power Amplifier Module, 1850–1910 MHz Features ■ 40% WCDMA efficiency at +28.5dBm Pout ■ 20% WCDMA efficiency (58mA total current) at General Description The RMPA1966 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1966 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 60% at 16dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4 x 4 x 1.0 mm LCC package is pin-compatible and a drop-in replacement for last generation 4 x 4 mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. +16dBm Pout ■ Low quiescent current (Iccq): 18mA in lo...