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RSX501L-20
Diodes
Schottky barrier diode
RSX501L-20
zApplications General rectification z Dimensio...
www.DataSheet4U.com
RSX501L-20
Diodes
Schottky barrier diode
RSX501L-20
zApplications General rectification z Dimensions (Unit : mm) z Land size figure (Unit : mm)
2.0
zFeatures 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability.
2.0
2.6±0.2
①
②
0.1±0.02 0.1
5.0±0.3
3 5
5 7
4.5±0.2
1.2±0.3
PMDS
1.5±0.2 2.0±0.2
zStructure
zConstruction Silicon epitaxial planar
ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date
z Taping specifications (Unit : mm)
2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3
5.5±0.05
φ1.55 2.9±0.1 4.0±0.1 2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current Forward current s urge peak ( 60Hz・ 1cyc ) Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Ts tg Lim its 25 20 5 70 125 -40 to +125 Unit V V A A ℃ ℃
(*1)Tc=90 ℃ m ax Mouinted on epoxy board. 180° Half s ine wave
zElectrical characteristics (Ta=25°C) Parameter Symbol Min. VF Forward voltage IR Reverse current
Typ. -
Max. 0.39 500
Unit V µA
IF=3.0A VR=20V
5.3±0.1 0.05 9.5±0.1
Conditions
12±0.2
4.2
Rev.D
1/3
RSX501L-20
Diodes
zElectrical characteristic curves (Ta=25°C)
10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 10000 1000 100 Ta=-25℃ 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-IR CHARA...