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RSX501LA-20
Diodes
Schottky barrier diode
RSX501LA-20
zApplications General rectification zFeatures 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
2.0 1.4
zStructure Silicon epitaxial planar
ROHM : PMDT
PMDT
zStructure
zTaping dimensions (Unit : mm)
2.0±0.05 4.0±0.1 φ1.55±0.1 0 0.25±0.05 1.75±0.1
1.4
5.5±0.05
12.0±0.2
φ1.55±0.1 0 2.7±0.1 4.0±0.1 1.25±0.1
zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 25 VRM Reverse voltage (DC) VR 20 Average rectified forward current (*1) 5.0 Io Forward current surge peak (60Hz・1cyc) 70 IFSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, Tc=90℃ max. zElectrical characteristic (Ta=25°C)
5.0±0.1
Unit V V A A ℃ ℃
Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.39 500
Unit V µA
Conditions IF=3.0A VR=20V
5.0±0.1
4.4
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RSX501LA-20
Diodes
zElectrical characteristic curves
10
Ta=125℃ Ta=75℃
1000000 Ta=125℃ 100000 REVERSE CURRENT:IR(uA)
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD CURRENT:IF(A)
1
Ta=25℃
10000 1000 100
Ta=75℃
0.1
Ta=-25℃
Ta=25℃
100
0.01
Ta=-25℃ 10 1
0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
10 0 5 10 15 20 25 30 0 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30
380 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=3A n=30pcs
1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 AVE:196.8uA Ta=25℃ VR=20V n=30pcs
1050 1040 1030 Ta=25℃ f=1MHz VR=0V n=10pcs
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
370
1020 1010 1000 990 980 970 960 950 AVE:997.4pF
360
350 AVE:350.0mV
340
330 VF DISPERSION MAP
0 IR DISPERSION MAP
Ct DISPERSION MAP
300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISRESION MAP 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t Ifsm 1cyc 8.3ms
30 25 20 15 10 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc
AVE:186.0A
AVE:11.6ns
1000
Mounted on epoxy board
PEAK SURGE FORWARD CURRENT:IFSM(A)
5 Rth(j-a)
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
100 FORWARD POWER DISSIPATION:Pf(W)
4 D=1/2 DC Sin(θ=180)
10
IM=100mA
Rth(j-c)
IF=1A
3
2
1
1ms
time
1
300us
0.1 0.001
0.1
10
1000
0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 8 10
TIME:t(s) Rth-t CHARACTERISTICS
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RSX501LA-20
Diodes
5
15 0A 0V 10 T DC 5 Sin(θ=180) Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t VR D=t/T VR=10V Tj=150℃
15 0A 0V 10 DC T D=1/2 5 Sin(θ=180) Io t VR D=t/T VR=10V Tj=150℃
3 DC 2
D=1/2
1 Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
4 REVERSE POWER DISSIPATION:PR (W)
D=1/2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150
30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV
ESD DISPERSION MAP
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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this documen.