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RSX501LA-20 Dataheets PDF



Part Number RSX501LA-20
Manufacturers Rohm
Logo Rohm
Description Schottky barrier diode
Datasheet RSX501LA-20 DatasheetRSX501LA-20 Datasheet (PDF)

www.DataSheet4U.com RSX501LA-20 Diodes Schottky barrier diode RSX501LA-20 zApplications General rectification zFeatures 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 2.0 1.4 zStructure Silicon epitaxial planar ROHM : PMDT PMDT zStructure zTaping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.1       0 0.25±0.05 1.75±0.1 1.4 5.5±0.05 12.0±0.2 φ1.55±0.1       0 2.7±0.1 4.0±0.1 1.25±0.1 zAbsolute ma.

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www.DataSheet4U.com RSX501LA-20 Diodes Schottky barrier diode RSX501LA-20 zApplications General rectification zFeatures 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) 2.0 1.4 zStructure Silicon epitaxial planar ROHM : PMDT PMDT zStructure zTaping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.1       0 0.25±0.05 1.75±0.1 1.4 5.5±0.05 12.0±0.2 φ1.55±0.1       0 2.7±0.1 4.0±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 25 VRM Reverse voltage (DC) VR 20 Average rectified forward current (*1) 5.0 Io Forward current surge peak (60Hz・1cyc) 70 IFSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, Tc=90℃ max. zElectrical characteristic (Ta=25°C) 5.0±0.1 Unit V V A A ℃ ℃ Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.39 500 Unit V µA Conditions IF=3.0A VR=20V 5.0±0.1 4.4 1/3 RSX501LA-20 Diodes zElectrical characteristic curves 10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ 100000 REVERSE CURRENT:IR(uA) 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 1 Ta=25℃ 10000 1000 100 Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 100 0.01 Ta=-25℃ 10 1 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 30 0 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 380 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=3A n=30pcs 1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 AVE:196.8uA Ta=25℃ VR=20V n=30pcs 1050 1040 1030 Ta=25℃ f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 1020 1010 1000 990 980 970 960 950 AVE:997.4pF 360 350 AVE:350.0mV 340 330 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISRESION MAP 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t Ifsm 1cyc 8.3ms 30 25 20 15 10 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc AVE:186.0A AVE:11.6ns 1000 Mounted on epoxy board PEAK SURGE FORWARD CURRENT:IFSM(A) 5 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 FORWARD POWER DISSIPATION:Pf(W) 4 D=1/2 DC Sin(θ=180) 10 IM=100mA Rth(j-c) IF=1A 3 2 1 1ms time 1 300us 0.1 0.001 0.1 10 1000 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 8 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 RSX501LA-20 Diodes 5 15 0A 0V 10 T DC 5 Sin(θ=180) Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t VR D=t/T VR=10V Tj=150℃ 15 0A 0V 10 DC T D=1/2 5 Sin(θ=180) Io t VR D=t/T VR=10V Tj=150℃ 3 DC 2 D=1/2 1 Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) D=1/2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this documen.


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