EMF33

www.DataSheet4U.com EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 zApplications Power management circuit zDimensions (Unit : mm) EMT6 1.6 0.5 zFeatures 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package. 2) Power switching circuit in a single package. 3) Mounting cost and area can be cut in half. 1.0 0.5 0.5 (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions Abbreviated symbol : F33 zStructure Epitaxial Plannar Silicon Transistor zPackaging specifications Package Type EMF33 Tr1 Tr2 ∗2 zEquivalent circuit Taping T2R 8000 (6) (5) ∗1 (4) Code Basic ordering unit (pieces) zAbsolute maximum ratings (Ta=25°C) R2 Parameter Supply voltage Input voltage Collector current ∗ Characteristics of built-in transistor. Symbol VCC VIN IC(max) ∗ Limits −12 −10 to +5 −500 Unit V V mA R1 (1) Emitter (2) Base (3) Drain (4) Source (5) Gate (6) Collector (1) (2) (3) ∗1 ESD protection diode ∗2 Body diode Tr1 : R1/R2=1kΩ/10kΩ Tr2 : MOS FET Parameter Drain-source voltage Gate-source voltage Drain current Continous Pulsed Continous Reverse drain current Pulsed Symbol VDSS VGSS ID IDP IDR IDRP ∗ ∗ Limits 30 ±20 100 200 100 200 Unit V V mA mA mA mA ∗ PW≤10ms DUTY CYCLE≤50% Parameter Power dissipation Junction temperature Range of storage temperature Symbol PD Tj Tstg ∗ Limits 150 120 150 −55 to +150 Unit mW / TOTAL mW / ELEMENT °C °C...