1SS400CS

www.DataSheet4U.com 1SS400CS Diodes Switching diode 1SS400CS zApplications High speed switching zExternal dimensions (Unit : mm) 0.16±0.05 CATHODE MARK 0.6±0.06 zLand size figure 0.55 0.45 zFeatures 1) Ultra small mold type. (VMN2) 2) High reliability 0.9±0.05 1.0±0.05 0～0.1 0.156 0.35±0.1 0.37±0.02 0.60±0.06 zConstruction Silicon epitaxial planer 0.58 0～0.1 0.37 0.28±0.05 VMN2 zStructure 0.025 0.05±0.04 0.28±0.05 ROHM : VMN2 dot (year week factory) + day zTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.2±0.05 1.75±0.1 0.45 3.50±0.05 8.0±0.2 0.5 0.42 0.01 0.7±0.05 0.01 φ0.50±0.05 2±0.05 4.0±0.1 0.52±0.05 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward voltage(DC) Average rectified forward current Io Isurge Surge current （t=1s） Junction temperature Tj Storage temperature Tstg zElectrical characteristic (Ta=25°C) (∗ Per chip) Param eter Forward voltage Revers e current Capacitance between term inal Revers e recovery tim e Sym bol VF IR Ct trr Min. Typ. - Limits 90 80 225 100 500 150 -55 to +150 Unit V V mA mA mA ℃ ℃ Max. 1.2 0.1 3.0 4.0 Unit V µA pF ns IF =100m A VR =80V Conditions VR =0.5V , f=1MHz VR =6V , IF=10m A , RL=100 Ω 1.10±0.05 1.1±0.05 1.1±0.04 0.5 0.5 1/2 1SS400CS Diodes zElectrical characteristic curves Ta=150℃ 1000 Ta=125℃ 100000 10000 Ta=125℃ 10 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) Ta=75℃ 1000 100 10 1 0.1 Ta=25℃ 10 ...