Switching diode
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1SS400CS
Diodes
Switching diode
1SS400CS
zApplications High speed switching
zExternal dimensions ...
Description
www.DataSheet4U.com
1SS400CS
Diodes
Switching diode
1SS400CS
zApplications High speed switching
zExternal dimensions (Unit : mm)
0.16±0.05 CATHODE MARK 0.6±0.06
zLand size figure
0.55 0.45
zFeatures 1) Ultra small mold type. (VMN2) 2) High reliability
0.9±0.05
1.0±0.05
0~0.1
0.156 0.35±0.1 0.37±0.02
0.60±0.06
zConstruction Silicon epitaxial planer
0.58
0~0.1
0.37
0.28±0.05
VMN2
zStructure
0.025 0.05±0.04 0.28±0.05
ROHM : VMN2 dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 0.2±0.05
1.75±0.1
0.45
3.50±0.05
8.0±0.2
0.5
0.42 0.01 0.7±0.05 0.01 φ0.50±0.05 2±0.05 4.0±0.1 0.52±0.05
zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward voltage(DC) Average rectified forward current Io Isurge Surge current (t=1s) Junction temperature Tj Storage temperature Tstg zElectrical characteristic (Ta=25°C) (∗ Per chip)
Param eter Forward voltage Revers e current Capacitance between term inal Revers e recovery tim e Sym bol VF IR Ct trr Min. Typ. -
Limits 90 80 225 100 500 150 -55 to +150
Unit V V mA mA mA ℃ ℃
Max. 1.2 0.1 3.0 4.0
Unit V µA pF ns IF =100m A VR =80V
Conditions
VR =0.5V , f=1MHz VR =6V , IF=10m A , RL=100 Ω
1.10±0.05
1.1±0.05
1.1±0.04
0.5
0.5
1/2
1SS400CS
Diodes
zElectrical characteristic curves
Ta=150℃ 1000 Ta=125℃ 100000 10000 Ta=125℃ 10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=75℃ 1000 100 10 1 0.1 Ta=25℃
10
...
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