50A02CH

www.DataSheet4U.com Ordering number : ENN7487 50A02CH PNP Epitaxial Planar Silicon Transistor 50A02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2150A [50A02CH] Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit. Features Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]. Small ON-resistance (Ron). 1 0.4 0.6 3 0.05 1.6 2.8 2 1.9 0.6 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings --50 --50 --5 --500 --1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--100mA, IB=--10mA IC=--100mA, IB=--10mA Ratings min typ max --100 --100 200 690 3.8 -60 --0.9 --120 --1.2 500 MHz pF mV V Unit nA nA ...