HVD147

www.DataSheet4U.com HVD147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0392-0200 Rev.2.00 Oct 20, 2004 Features Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD147 Laser Mark L1 Package Code SFP Pin Arrangement Cathode mark Mark 1 L1 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 HVD147 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 −55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability * 1 Symbol IR VF C rf — Min — — — — — 100 Typ — — — 2.5 — — Max 100 1.00 0.31 — 1.5 — Unit nA V pF Ω V Test Condition VR = 30 V IF = 10 mA VR = 1 V, f = 1 MHz IF = 2 mA, f = 100 MHz IF = 10 mA, f = 100 MHz C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.2.00 Oct 20, 2004 page 2 of 4 HVD147 Main Characteristic 10-2 Ta = 75°C 10-8 10-4 10-9 Reverse current IR (A) 1.0 Forward current IF (A) Ta = 25°C 10-10 10-11 10-6 10-8 10-12 10-13 10-10 10-12 0 0.2 0.4 ...