1M x 16Bit x 4 Banks Mobile SDRAM
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K4M64163PK - R(B)E/G/C/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. ...
Description
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K4M64163PK - R(B)E/G/C/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) DQM for masking. Auto refresh. 64ms refresh period (4K cycle). Commercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).
Mobile-SDRAM
GENERAL DESCRIPTION
The K4M64163PK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock, and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
ORDERING INFORMATION
Part No. K4M64163PK-R(B)E/G/C/F75 K4M64163PK-R(B)E/G/C/F90 K4M64163PK-R(B)E/...
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