Document
www.DataSheet4U.com
SIPMOS® Power Transistor
Features • N channel
•
SPD 30N03
30 30 V A
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
Enhancement mode
RDS(on) 0.015 Ω
• Avalanche rated • dv/dt rated • 175˚C operating temperature
Type SPD30N03 SPU30N03
Package P-TO252
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
Q67040-S4144-A2 Tape and Reel
P-TO251-3-1 Q67040-S4146-A2 Tube
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 250 12 6 kV/µs mJ Unit A
ID
TC = 25 ˚C, TC = 100 ˚C
1)
Pulsed drain current
IDpulse EAS EAR
dv/dt
TC = 25 ˚C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
±20 120 -55... +175 55/175/56
V W ˚C
TC = 25 ˚C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
SPD 30N03
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 1.25 100 75 50 K/W Unit
RthJC RthJA RthJA
-
Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 µA 0.1 10 1 100 100 nA Ω 0.0085 0.015 V Unit
V(BR)DSS VGS(th) I DSS
30 2.1
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS ID = 80 µA Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, T j = 25 ˚C VDS = 30 V, VGS = 0 V, T j = 150 ˚C
Gate-source leakage current
I GSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 30 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
SPD 30N03
Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 34 1400 645 260 20 max. 1750 810 325 30 ns S pF Unit
g fs Ciss Coss Crss t d(on)
18 -
VDS≥2*ID*RDS(on)max , ID = 30 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω
Rise time
tr
-
35
52
VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω
Turn-off delay time
t d(off)
-
50
75
VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω
Fall time
tf
-
45
65
VDD = 15 V, V GS = 10 V, ID = 30 A, RG = 6.8 Ω
Data Sheet
3
05.99
SPD 30N03
Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 5 19 39 4.8 max. 7.5 28.5 60 V nC Unit
Q gs Q gd Qg V(plateau)
-
VDD = 24 V, ID = 30 A
Gate to drain charge
VDD = 24 V, ID = 30 A
Gate charge total
VDD = 24 V, ID = 30 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 24 V, ID = 30 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
1 40 0.035
30 120 1.6 60
A
TC = 25 ˚C
Inverse diode direct current,pulsed
TC = 25 ˚C
Inverse diode forward voltage V ns
VGS = 0 V, I F = 60 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge 0.052 µC
VR = 15 V, IF=l S , diF/dt = 100 A/µs
Data Sheet
4
05.99
SPD 30N03
Power Dissipation
Drain current
Ptot = f (TC)
SPD30N03
ID = f (TC )
parameter: VGS ≥ 10 V
SPD30N03
130
W
32
A
110 100 90 24
Ptot
70 16 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 ˚C 190 0 0 20 40 60 80 100 120 140 160 ˚C 190 8 12
ID TC
80
20
4
TC
Safe operating area
Transient thermal impedance
I D = f (V DS)
parameter : D = 0 , T C = 25 ˚C
10 3
SPD30N03
ZthJC = f (tp )
parameter : D = tp /T
10 1
SPD30N03
K/W
A
10 0
/I
D
100 µs
R
DS (
Z thJC
ID
on
)
=
10
2
DS
tp = 65.0µs
10 -1
V
10 -2 D = 0.50
1 ms
0.20 10
-3
10
1 10 ms
0.10 0.05 single pulse 0.02 0.01
DC
10 -4
10 0 -1 10
10
0
10
1
V
10
2
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
tp
Data Sheet
5
05.99
SPD 30N03
Typ. output characteristics
I D = f (VDS)
parameter: tp = 80 µs
SPD30N03
Typ. drain-source-on-resistance
RDS(on) = f (ID)
parameter: V GS
SPD30N03
75 A
Ptot = 120W
0.050
k h l ij f e g
Ω
VGS [V] a 4.0
a
b
c
d
60 55 50
d
b c d e f g
4.5
0.040
RDS(on)
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.035 0.030 0.025 0.020 0.015
e
ID
45 40 35 30 25 20 15
c
h i j k
b l
0.010
10 5
a
0.005
V
VGS [V] =
a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0
f kg i jh l
j 9.0 k l 10.0 20.0
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5.0
VDS
0.000 0
10
20
30.