ATR7035

www.DataSheet4U.com Features Frequency Range 5 GHz to 6 GHz POUT Maximum 28 dBm Gain Typically 19 dB VCC 3.0 V to 3.9 V Package: QFN16 Current Consumption in Power Down Mode Typically ≤15 µA Benefits Biasing Control Extends Battery Life Time Simple Input and Output Matching One Single Supply Voltage Required 5.8-GHz WDCT Power Amplifier ATR7035 Summary Preliminary Electrostatic sensitive device. Observe precautions for handling. Description Process The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good power-added efficiency. Circuitry The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The output stages were realized using an open-collector structure. The IC features 50-Ω input matching. Power-up/down and output level are controlled at bias control pin 6 (VCTL). Figure 1. Block Diagram VCC1 15 VCC2 13 ATR7035 RFIN 3 RFOUT 11 Matching RFOUT 10 Bias control 6 VCTL 16 VCC_CTL Rev. 4577DS–DECT–11/04 Note: This is a summary document. A complete document is available under NDA. For more information, please contact your local Atmel sales office. Ordering Information Extended Type Number ATR7035-PES ATR7035-PEQ Package QFN16 QFN16 Remarks Tube, MOQ 750 Taped and reeled, MOQ 6000 Package Information 2 ATR7035 [Preliminary] 4577DS–DECT–11/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-...