16 BIT. 29F160BE Datasheet

29F160BE BIT. Datasheet pdf. Equivalent

Part 29F160BE
Description 16M (2M X 8/1M X 16) BIT
Feature www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8.
Manufacture Fujitsu Media Devices
Datasheet
Download 29F160BE Datasheet



29F160BE
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20879-2E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29F160TE/BE-55/-70/-90
s GENERAL DESCRIPTION
The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase
operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
s PRODUCT LINE UP
(Continued)
Part No.
MBM29F160TE/160BE
Ordering Part No.
VCC = 5.0 V±5%
VCC = 5.0 V±10%
-55
-70
Max. Address Access Time (ns) 55 70
Max. CE Access Time (ns)
55 70
Max. OE Access Time (ns)
30 30
s PACKAGES
48-pin plastic TSOP (I)
Marking Side
-90
90
90
40
(FPT-48P-M19)
Marking Side
(FPT-48P-M20)



29F160BE
MBM29F160TE-55/-70/-90/MBM29F160BE-55/-70/-90
(Continued)
The MBM29F160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded ProgramTM* Algorithm which is an internal algorithm that automatically times the program pulse
widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5
seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded
EraseTM* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already
programmed before executing the erase operation. During erase, the device automatically times the erase pulse
widths and verifies proper cell margins.
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29F160TE/BE is erased when shipped from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
comleted, the device internally resets to the read mode.
The MBM29F160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the
read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during
the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read
mode and will have erroneous data stored in the address locations being programmed or erased. These locations
need re-writing after the Reset. Resetting the device enables the system’s microprocessor to read the boot-up
firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29F160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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