MBM29DL161TE

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20880-1E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTE/BE -70/90/12 s FEATURES Dual Operation 0.23 µm Process Technology Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to Table 1) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) +0.3 V –0.3 V +0.6 V –0.3 V MBM29DL16XTE/BE 70 — 70 70 30 — 90 90 90 35 — 12 120 120 50 s PACKAGES 48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 48-pin plastic FBGA Marking Side (FPT-48P-M19) (FPT-48P-M20) (BGA-48P-M11) MBM29DL16XTE/BE-70/90/12 (Continued) Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: TN – Normal Bend Type, TR – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) Minimum 100,000 program/erase cycles High performance 70 ns maximum access time Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in...