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PD - 97250
IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HE...
www.DataSheet4U.com
PD - 97250
IRGP4068DPbF INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF
Features
Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package
C
VCES = 600V IC = 48A, TC = 100°C
G E
tSC ≥ 5µs, TJ(max) = 175°C
n-channel
C
VCE(on) typ. = 1.65V
Benefits
Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI
C
GC
E
TO-247AC IRGP4068DPbF
E GC TO-247AD IRGP4068D-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 160°C IFSM IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current
Max.
600 96 48 192 192
Units
V
c d d
A
Diode Continous Forward Current Diode Non Repetitive Peak Surge Current @ TJ = 25°C Diode Peak Repetitive Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltag...