High Speed Infrared Emitting Diode
Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here)
www.vishay.com
TSHF5410
Vishay Semiconductors
High ...
Description
Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here)
www.vishay.com
TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology
94 8390
DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ± 27° Low forward voltage
Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz)
PRODUCT SUMMARY
COMPONENT TSHF5410
Ie (mW/sr) 62
Note Test conditions see table “Basic Characteristics”
ϕ (°) ± 27
λp (nm) 890
tr (ns) 10
ORDERING INFORMATION
ORDERING CODE TSHF5410
Note MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
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