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ZXTN25060BZ 60V, SOT89, NPN medium power transistor
Summary
BVCEX > 150V BVCEO > 60V BVECO > 6V IC(...
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ZXTN25060BZ 60V, SOT89,
NPN medium power
transistor
Summary
BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W
Description
Packaged in the SOT89 outline this new low saturation 60V
NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
C
B
Features
Extremely low equivalent on resistance; RCE(sat) = 46m⍀ at 5A 5 amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent hFE characteristics 6V reverse blocking capability
E
E C C B Pinout - top view
Applications
Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC-DC modules Backlight inverters Power switches MOSFET gate drivers
Ordering information
Device ZXTN25060BZTA Reel Size (inches) 7 Tape width (mm) 12 Quantity per reel 1000
Device marking
1C7 Issue 3 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTN25060BZ
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Base current Peak pulse current Power dissipation at Tamb = 25°C(a) Linear derating factor Power dissipation at Tamb = 25°C(b) Linear derating factor Power dissipation at Tamb = 25°C(c) Linear derating facto...