POWER MOSTFET. 75N75 Datasheet


75N75 MOSTFET. Datasheet pdf. Equivalent


Part Number

75N75

Description

N-CHANNEL POWER MOSTFET

Manufacture

UTC

Total Page 8 Pages
Datasheet
Download 75N75 Datasheet


75N75
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UNISONIC TECHNOLOGIES CO., LTD
75N75
75Amps, 75Volts
N-CHANNEL POWER MOSTFET
1
Power MOSFET
TO- 251
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast
switching speed, low thermal resistance, usually used at telecom
and computer application.
FEATURES
* RDS(ON) = 12.5m@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO - 252
1 TO-220
1 TO-220F
*Pb-free plating product number: 75N75L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
75N75-TA3-T
75N75L-TA3-T
TO-220
75N75-TF3-T
75N75L-TF3-T
TO-220F
75N75-TM3-T
75N75L-TM3-T
TO-251
75N75-TN3-R
75N75L-TN3-R
TO-252
75N75-TN3-T
75N75L-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
Tube
75N75L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd.
1 of 8
QW-R502-097,A

75N75
75N75
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
75
V
Continuous Drain Current
TC = 25
TC = 100
ID
75 A
56 A
Drain Current Pulsed (Note 1)
Gate to Source Voltage
IDM 300 A
VGS 20 V
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
900 mJ
300 mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15 V/ns
Total Power Dissipation
TC = 25
Derating above 25
PD
220 W
1.4 W/
Junction Temperature
TJ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Thermal Resistance Case-Sink
SYMBOL
θJA
θJC
θCS
MIN
TYP
0.5
ELECTRICAL CHARACTERISTICS (TC = 25 , unless otherwise specified)
MAX
62.5
0.8
UNIT
/W
/W
/W
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
TEST CONDITIONS
BVDSS VGS = 0 V, ID = 250 µA
BVDSS/
TJ
ID = 1mA,
Referenced
to
25
VDS = 75 V, VGS = 0 V
IDSS VDS = 75 V, VGS = 0 V,
TJ = 150
IGSS
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 48 A
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS = 0 V, VDS = 25 V
f = 1MHz
VDD = 38V, ID =48A,
VGS=10V, (Note 4, 5)
VDS = 60V, VGS = 10 V
ID = 48A, (Note 4, 5)
MIN TYP MAX UNIT
75 V
0.08 V/
20 µA
250 µA
100
-100
nA
nA
2.0 4.0 V
12.5 15 m
3300
530
80
12
79
80
52
90 140
20 35
30 45
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-097,A


Features www.DataSheet4U.com UNISONIC TECHNOLOGI ES CO., LTD 75N75 75Amps, 75Volts N-CHA NNEL POWER MOSTFET DESCRIPTION The UTC 75N75 is n-channel enhancement mode pow er field effect transistors with stable off-state characteristics, fast switch ing speed, low thermal resistance, usua lly used at telecom and computer applic ation. 1 Power MOSFET TO- 251 1 TO- 252 1 TO-220 FEATURES * RDS(ON) = 12 .5mΩ @VGS = 10 V * Ultra low gate cha rge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high rugg edness 1 TO-220F *Pb-free plating pro duct number: 75N75L SYMBOL 2.Drain 1. Gate 3.Source ORDERING INFORMATION Or der Number Package Normal Lead Free Pla ting 75N75-TA3-T 75N75L-TA3-T TO-220 75 N75-TF3-T 75N75L-TF3-T TO-220F 75N75-TM 3-T 75N75L-TM3-T TO-251 75N75-TN3-R 75N 75L-TN3-R TO-252 75N75-TN3-T 75N75L-TN3 -T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel .
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