NTMD2P01R2

www.DataSheet4U.com NTMD2P01R2 Power MOSFET −2.3 Amps, −16 Volts Dual SOIC−8 Package Features http://onsemi.com High Efficiency Components in a Single SOIC−8 Package High Density Power MOSFET with Low RDS(on) Logic Level Gate Drive SOIC−8 Surface Mount Package, Mounting Information for SOIC−8 Package Provided Pb−Free Packages are Available VDSS −16 V RDS(ON) Typ 100 mW @ −4.5 V ID Max −2.3 A Applications P−Channel D Power Management in Portable and Battery−Powered Products, i.e.: MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 100°C Pulsed Drain Current (Note 4) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −16 Vdc, VGS = −4.5 Vdc, Peak IL = −5.0 Apk, L = 28 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS RqJA PD ID ID IDM RqJA PD I...