IXSX80N60B

www.DataSheet4U.com High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = = = = 25°C 90°C 90°C 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) Maximum Ratings 600 600 ± 20 ± 30 160 80 75 300 ICM = 160 @ 0.8 VCES 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A A µs W °C °C °C °C PLUS 247TM (IXSX) G (TAB) C E TO-264 AA (IXSK) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 5 Ω, non-repetitive TC = 25°C G C E (TAB) G = Gate C = Collector E = Emitter TAB = Collector 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 300 0.4/6 Nm/lb.in. 6 10 g g Features ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drives ! DC choppers ! Uninterruptible power supplies (UPS) ! Switch-mode and resonant-mode power supplies Advantages ! PLUS 247TM package for clip or spring mounting ! Space savings ! High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600...