detector intended. LMV221 Datasheet

LMV221 intended. Datasheet pdf. Equivalent

LMV221 Datasheet
Recommendation LMV221 Datasheet
Part LMV221
Description RF power detector intended
Feature LMV221; www.DataSheet4U.com LMV221 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA D.
Manufacture National Instruments
Datasheet
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National Instruments LMV221
www.DataSheet4U.com
December 2006
LMV221
50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for
CDMA and WCDMA
General Description
The LMV221 is a 40 dB RF power detector intended for use
in CDMA and WCDMA applications. The device has an RF
frequency range from 50 MHz to 3.5 GHz. It provides an ac-
curate temperature and supply compensated output voltage
that relates linearly to the RF input power in dBm. The circuit
operates with a single supply from 2.7V to 3.3V.
The LMV221 has an RF power detection range from −45 dBm
to −5 dBm and is ideally suited for direct use in combination
with a 30 dB directional coupler. Additional low-pass filtering
of the output signal can be realized by means of an external
resistor and capacitor. Figure (a) shows a detector with an
additional output low pass filter. The filter frequency is set with
RS and CS.
Figure (b) shows a detector with an additional feedback low
pass filter. Resistor RP is optional and will lower the Trans
impedance gain (RTRANS). The filter frequency is set with
CP//CTRANS and RP//RTRANS.
The device is active for Enable = High, otherwise it is in a low
power consumption shutdown mode. To save power and pre-
vent discharge of an external filter capacitance, the output
(OUT) is high-impedance during shutdown.
The LMV221 power detector is offered in the small 2.2 mm x
2.5 mm x 0.8 mm LLP package.
Features
40 dB linear in dB power detection range
Output voltage range 0.3 to 2V
Shutdown
Multi-band operation from 50 MHz to 3.5 GHz
0.5 dB accurate temperature compensation
External configurable output filter bandwidth
2.2 mm x 2.5 mm x 0.8 mm LLP 6 package
Applications
UMTS/CDMA/WCDMA RF power control
GSM/GPRS RF power control
PA modules
IEEE 802.11b, g (WLAN)
Typical Application
(a) LMV221 with output RC Low Pass Filter
(b) LMV221 with feedback (R)C Low Pass Filter
20173771
© 2006 National Semiconductor Corporation 201737
20173704
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National Instruments LMV221
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
VDD - GND
RF Input
Input power
DC Voltage
Enable Input Voltage
ESD Tolerance (Note 2)
Human Body Model
Machine Model
Charge Device Model
Storage Temperature
Range
3.6V
10 dBm
400 mV
VSS - 0.4V < V EN < VDD + 0.4V
2000V
200V
2000V
−65°C to 150°C
Junction Temperature
(Note 3)
Maximum Lead Temperature
(Soldering,10 sec)
150°C
260°C
Operating Ratings (Note 1)
Supply Voltage
Temperature Range
RF Frequency Range
RF Input Power Range (Note 5)
Package Thermal Resistance θJA
(Note 3)
2.7V to 3.3V
−40°C to +85°C
50 MHz to 3.5 GHz
−45 dBm to −5 dBm
−58 dBV to −18 dBV
86.6°C/W
2.7 V DC and AC Electrical Characteristics
Unless otherwise specified, all limits are guaranteed to; TA = 25°C, VDD = 2.7V, RF input frequency f = 1855 MHz CW (Continuous
Wave, unmodulated). Boldface limits apply at the temperature extremes (Note 4).
Symbol
Parameter
Condition
Min Typ Max
(Note 6) (Note 7) (Note 6)
Units
Supply Interface
IDD Supply Current
Logic Enable Interface
Active mode: EN = High, no Signal
present at RFIN.
6.5 7.2 8.5
5 10 mA
Shutdown: EN = Low, no Signal present
0.5 3
at RFIN.
4 μA
EN = Low: PIN = 0 dBm (Note 8)
10
VLOW
EN Logic Low Input Level
(Shutdown mode)
0.6 V
VHIGH
EN Logic High Input Level
IEN Current into EN Pin
RF Input Interface
1.1 V
1 μA
RIN Input Resistance
Output Interface
40 47.1 60
VOUT
IOUT
Output Voltage Swing
Output Short Circuit Current
From Positive Rail, Sourcing,
VREF = 0V, IOUT = 1 mA
From Negative Rail, Sinking,
VREF = 2.7V, IOUT = 1 mA
Sourcing, VREF = 0V, VOUT = 2.6V
Sinking, VREF = 2.7V, VOUT = 0.1V
16 40
50
mV
14 40
50
3 5.4
2.7
3 5.7
2.7
mA
BW Small Signal Bandwidth
No RF input signal. Measured from REF
450
kHz
input current to VOUT
RTRANS
Output Amp Transimpedance
Gain
No RF Input Signal, from IREF to VOUT,
DC
35
42.7
55
k
SR Slew Rate
Positive, VREF from 2.7V to 0V
Negative, VREF from 0V to 2.7V
3 4.1
2.7
3 4.2
2.7
V/µs
ROUT
Output Impedance
(Note 8)
No RF Input Signal, EN = High. DC
measurement
0.6 5
6
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National Instruments LMV221
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Symbol
Parameter
IOUT,SD
Output Leakage Current in
Shutdown mode
RF Detector Transfer
VOUT,MAX
Maximum Output Voltage
PIN= −5 dBm
(Note 8)
VOUT,MIN
ΔVOUT,MIN
ΔVOUT
Minimum Output Voltage
(Pedestal)
Pedestal Variation over
temperature
Output Voltage Range
PIN from −45 dBm to −5 dBm
(Note 8)
KSLOPE
Logarithmic Slope
(Note 8)
PINT Logarithmic Intercept
(Note 8)
tON
tR
tF
en
vN
PSRR
Turn-on Time
(Note 8)
Rise Time (Note 9)
Fall Time (Note 9)
Output Referred Noise
(Note 9)
Output referred Noise
(Note 8)
Power Supply Rejection Ratio
(Note 9)
Condition
EN = Low, VOUT = 2.0V
Min
(Note 6)
Typ
(Note 7)
21
Max
(Note 6)
300
500
Units
nA
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
No input Signal
No Input Signal, Relative to 25°C
1.67
1.67
1.53
1.42
1.33
1.21
175
142
−20
1.76
1.75
1.61
1.49
1.40
1.28
250
1.83
1.82
1.68
1.57
1.48
1.36
350
388
20
V
mV
mV
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
f = 50 MHz
f = 900 MHz
f = 1855 MHz
f = 2500 MHz
f = 3000 MHz
f = 3500 MHz
No signal at PIN, Low-High transition
EN. VOUT to 90%
PIN = No signal to 0 dBm, VOUT from 10%
to 90%
PIN = 0 dBm to no signal, VOUT from 90%
to 10%
PIN = −10 dBm, at 10 kHz
1.37
1.34
1.24
1.14
1.07
0.96
39
36.7
34.4
32.6
31
30
−50.4
−54.1
−53.2
−51.8
−51.1
−49.6
Integrated over frequency band
1 kHz - 6.5 kHz
PIN = −10 dBm, f = 1800 MHz
55
1.44
1.40
1.30
1.20
1.12
1.01
40.5
38.5
35.7
33.8
32.5
31.9
−49.4
−52.8
−51.7
−50
−48.9
−46.8
8
2
2
1.5
100
60
1.52
1.47
1.37
1.30
1.20
1.09
42
40
37.1
35.2
34
33.5
−48.3
−51.6
−50.2
−48.3
−46.6
−44.1
10
12
12
V
mV/dB
dBm
µs
µs
12 µs
µV/
150 µVRMS
dB
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