RADIATION HARDENED POWER MOSFET
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PD-96931A
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radi...
Description
www.DataSheet4U.com
PD-96931A
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level IRHNJ67134 100K Rads (Si) IRHNJ63134 300K Rads (Si) RDS(on) 0.088Ω 0.088Ω ID 19A 19A
IRHNJ67134 150V, N-CHANNEL
TECHNOLOGY
SMD-0.5
International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Pea...
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