PowerTrench MOSFET. FDMC6890NZ Datasheet

FDMC6890NZ Datasheet PDF, Equivalent


Part Number

FDMC6890NZ

Description

Dual N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 11 Pages
PDF Download
Download FDMC6890NZ Datasheet PDF


FDMC6890NZ Datasheet
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FDMC6890NZ
Dual N-Channel PowerTrench® MOSFET
20V, 4A, Q1:68mΩ, Q2:100m
Features
General Description
October 2006
tm
Q1: N-Channel
„ Max rDS(on) = 68mat VGS = 4.5V, ID = 4A
„ Max rDS(on) = 100mat VGS = 2.5V, ID = 3A
Q2: N-Channel
„ Max rDS(on) = 100mat VGS = 4.5V, ID = 4A
„ Max rDS(on) = 150mat VGS = 2.5V, ID = 2A
„ Low gate Charge
„ RoHS Compliant
FDMC6890NZ is a compact single package solution for DC to
DC converters with excellent thermal and switching
characteristics. Inside the Power 33 package features two
N-channel MOSFETs with low on-state resistance and low gate
charge to maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Application
„ DC - DC Conversion
Up
S1 D1/S2 D2
G1 D1/S2 G2
Power 33
Bottom
G1 D1/S2 G2
D1 D2
S1 D1/S2 D2
D2
4
D1/S2 5
S1
6
G2
3
2 D1/S2
1 G1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Parameter
PD
Power Dissipation (Steady State) Q1
Power Dissipation (Steady State) Q2
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
Q1 Q2
20 20
±12 ±12
4
10
1.92
1.78
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Q1
Q2
(Note 1a)
65
70
°C/W
Device Marking
6890N
Device
FDMC6890NZ
Package
Power 33
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
1
www.fairchildsemi.com

FDMC6890NZ Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to 25°C
VDS = 16V, VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS= 0V
Type Min Typ
Q1 20
Q2 20
Q1 13
Q2 12
Q1
Q2
Q1
Q2
Max Units
V
1
1
±10
±100
mV/°C
µA
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 3A
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 2A
VDS = V, ID =4A
Q1 0.6 0.9
Q2 0.6 1.0
Q1 -3
Q2 -3
Q1
58
77
Q2
67
102
Q1 10
Q2 7
2
2
V
mV/°C
68
100
100
m
150
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
VDS = 10V, VGS = 0V, f= 1MHZ
f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
205 270
190 250
60 80
60 80
40 60
35 55
3.3
2.8
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge at 4.5V
Qg(2)
Total Gate Charge at 2V
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 10V, ID = 4A, RGEN = 6
VGS = 0V to 4.5V
VDD = 10 V
ID = 4A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
4
4
10
10
ns
13
12
22
21
ns
10
7
19
14
ns
6
6
12
12
ns
2.4
1.8
3.4
2.6
nC
1.4
0.6
1.9
0.8
nC
0.4
0.5
nC
0.9
0.8
nC
FDMC6890NZ Rev.C
2 www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDMC6890NZ Dual N-C hannel PowerTrench® MOSFET October 20 06 FDMC6890NZ Dual N-Channel PowerTren ch® MOSFET 20V, 4A, Q1:68mΩ, Q2:100m Ω Features Q1: N-Channel „ Max rDS(o n) = 68mΩ at VGS = 4.5V, ID = 4A „ M ax rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A Q2: N-Channel „ Max rDS(on) = 100 mΩ at VGS = 4.5V, ID = 4A „ Max rDS( on) = 150mΩ at VGS = 2.5V, ID = 2A „ Low gate Charge „ RoHS Compliant tm General Description FDMC6890NZ is a co mpact single package solution for DC to DC converters with excellent thermal a nd switching characteristics. Inside th e Power 33 package features two N-chann el MOSFETs with low on-state resistance and low gate charge to maximize the po wer conversion and switching efficiency . The Q1 switch also integrates gate pr otection from unclamped voltage input. Application „ DC - DC Conversion Up S1 D1/S2 D2 Bottom G1 D1/S2 G2 D2 4 3 G2 D1 D2 D1/S2 5 S1 2 D1/S2 G1 G1 D1/S2 G2 Power 33 S1 D1/S2 D2 6 1 MOSFET Maximum Ratings TA = 25°C unless other.
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