2SC5383 SMALL-SIGNAL TRANSISTOR Datasheet

2SC5383 Datasheet, PDF, Equivalent


Part Number

2SC5383

Description

SMALL-SIGNAL TRANSISTOR

Manufacture

Isahaya Electronics

Total Page 3 Pages
Datasheet
Download 2SC5383 Datasheet


2SC5383
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DESCRIPTION
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
OUTLINE DRAWING
Unit:mm
1.6
0.4 0.8 0.4
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=0.3V max(@Ic=100mA,IB=10mA)
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
②③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
50
50
6
200
150
+150
-55~+150
Unit
V
V
V
mA
mW
JEITA:SC-75A
JEDEC:-
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I C=100μA ,R BE=∞
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
I C=100mA ,IB=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0,f=1MHz
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
Limits
Min Typ Max
50 -
-
- - 0.1
- - 0.1
150 - 800
90 - -
- - 0.3
- 200
-
- 2.5 -
- - 15
※) It shows hFE classification in below table.
Item
EFG
hFE Item
150~300 250~500 400~800
Unit
V
μA
μA
V
MHz
pF
dB
ISAHAYA ELECTRONICS CORPORATION

2SC5383
〈SMALL-SIGNAL TRANSISTOR〉
COMMON EMITTER OUTPUT
50
0.16mA
0.14mA
Ta=25℃
40 0.12mA
0.10mA
30
0.08mA
20 0.06mA
0.04mA
10 0.02mA
IB=0
0
0 12 34 5
COLLECTOR EMITTER VOLTAGE VCE(V)
10000
1000
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
Ta=25℃
VCE=6V
100(@IC=1mA)
100
10
1
0.1 1 10 100 1000
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
Ta=25℃
IE=0
f=1MHz
10
1
0.1
0.1 1 10 100
COLLECTOR TO BASE VOLTAGE VCB(V)
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
COMMON EMITTER TRANSFER
50
Ta=25℃
VCE=6V
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1
BASE TO EMITTER VOLTAGE VBE(V)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
250
Ta=25℃
VCE=6V
200
150
100
50
0
-0.1
-1 -10
EMITTER CURRENT IE(mA)
-100
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
250
200
150
100
50
0
0 25 50 75 100 125 150
AMBIENT TEMPERTURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION


Features www.DataSheet4U.com 〈SMALL-SIGNAL TRA NSISTOR〉 2SC5383 FOR LOW FREQUENCY A MPLIFY APPLICATION SILICON NPN EPITAXIA L TYPE(Ultra super mini type) DESCRIPTI ON 2SC5383 is a ultra super mini packag e resin sealed silicon NPN epitaxial tr ansistor, It is designed for low freque ncy voltage application. . 0.4 1.6 0.8 0.4 OUTLINE DRAWING Unit:mm 0. 5 ① ② ③ 1.6 1.0 FEATURE ● Sm all collector to emitter saturation vol tage. VCE(sat)=0.3V max(@Ic=100mA,IB= 10mA) ●Excellent linearity of DC fo rward gain. ●Ultra super mini package for easy mounting 0.7 0.5 For Hybri d IC,small type machine low frequency v oltage Amplify application. JEITA:SC -75A JEDEC:- MAXIMUM RATINGS(Ta=25 ℃) Symbol VCBO VCEO VEBO I O TERMI NAL CONNECTER Ratings 50 50 6 200 150 150 -55~+150 Unit V V V mA mW ℃ ℃ Parameter Collector to Base volta ge Collector to Emitter voltage Emitter to Base voltage Collector current Coll ector dissipation Junction temperature Storage temperature ①:BASE ②:EMITTER ③:COLLECTOR Pc Tj Tstg ELECTRI.
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