K7Q161882A

www.DataSheet4U.com K7Q163682A K7Q161882A Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change 1. Changed Pin configuration at x36 organization. - 9F ; from Q14 to D14 . - 10F ; from D14 to Q14 . 2. Reserved pin for high density name change from NC to Vss/SA 1. Final SPEC release 2. Modify thermal resistance Draft Date May, 22 2001 Remark Advance Sep,03 2001 Advance 0.2 Nov. 20. 2001 Preliminary 1.0 July, 03. 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- July 2002 Rev 1.0 K7Q163682A K7Q161882A 512Kx36-bit, 1Mx18-bit QDRTM SRAM FEATURES 1.8V+0.1V/-0.1V Power Supply. I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. Separate independent read and write data ports with concurrent read and write operation HSTL I/O Full data coherency, providing most current data . Synchronous pipeline read with self timed early write. Registered address, control and data input/output. DDR(Double Data Rate) Interface on read and write ports. Fixed ...