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K8D1716UBB Dataheets PDF



Part Number K8D1716UBB
Manufacturers Samsung
Logo Samsung
Description 16M Dual Bank NOR Flash Memory
Datasheet K8D1716UBB DatasheetK8D1716UBB Datasheet (PDF)

K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank .

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Document
K8D1716UTB / K8D1716UBB FLASH MEMORY Document Title 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Initial Draft Draft Date July 25, 2004 Remark Advance 1 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory FEATURES • Single Voltage, 2.7V to 3.6V for Read and Write operations • Organization 1,048,576 x 16 bit (Word mode) • Fast Read Access Time : 70ns • Read While Program/Erase Operation • Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb • Secode(Security Code) Block : Extra 64K Byte block • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby Mode/Auto Sleep Mode : 5µA • WP/ACC input pin - Allows special protection of two outermost boot blocks at VIL, regardless of block protect status - Removes special protection of two outermost boot block at VIH, the two blocks return to normal block protect status - Program time at VHH : 9µs/word • Erase Suspend/Resume • Unlock Bypass Program • Hardware RESET Pin • Command Register Operation • Block Group Protection / Unprotection • Supports Common Flash Memory Interface • Industrial Temperature : -40°C to 85°C • Endurance : 100,000 Program/Erase Cycles Minimum • Data Retention : 10 years • Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch FLASH MEMORY GENERAL DESCRIPTION The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and program capability. The K8D1716U NOR Flash consists of two banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Access times of 70ns, 80ns and 90ns are available for the device. The device′s fast access times allow high speed microprocessors to operate without wait states. The device performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed within typically 0.7 sec. The device requires 15mA as program/erase current in the standard and industrial temperature ranges. The K8D1716U NOR Flash Memory is created by using Samsung's advanced CMOS process technology. This device is available in 48 pin TSOP1 package. The device is compatible with EPROM applications to require high-density and costeffective nonvolatile read/write storage solutions. PIN DESCRIPTION Pin Name A0 - A19 Pin Function Address Inputs Data Inputs / Outputs DQ15 Data Input / Output A-1 LSB Address Word / Byte Selection Chip Enable Output Enable Hardware Reset Pin Ready/Busy Output Write Enable Hardware Write Protection/Program Acceleration Power Supply Ground No Connection PIN CONFIGURATION A15 A14 A13 A12 A11 A10 A9 A8 A19 N.C WE RESET N.C WP/ACC RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE Vss DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE Vss CE A0 DQ0 - DQ14 DQ15/A-1 BYTE CE OE RESET RY/BY WE WP/ACC 48-pin TSOP1 Standard Type 12mm x 20mm Note : Please refer to the package dimension. Vcc VSS N.C SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB FLASH MEMORY FUNCTIONAL BLOCK DIAGRAM Vcc Vss Bank1 Address X Dec Bank1 Cell Array Y Dec CE OE WE BYTE RESET RY/BY WP/ACC I/O Interface & Bank Control Bank1 Data-In/Out Bank2 Data-In/Out Latch & Control Y Dec Bank2 Address Latch & Control X Dec Bank2 Cell Array A0~A19 DQ15/A-1 DQ0~DQ14 Erase Control High Voltage Gen. Program Control 3 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB ORDERING INFORMATION FLASH MEMORY K 8 D 17 1 6 U T B - T I 0 7 Samsung NOR Flash Memory Device Type Dual Bank Boot Block Access Time 07 = 70 ns 08 = 80 ns 09 = 90 ns Operating Temperature Range C = Commercial Temp. (0 °C to 70 °C) I = Industrial Temp. (-40 °C to 85 °C) Package Y = 48 TSOP1 Version B = 3rd Generation Block Architecture T = Top Boot Block B = Bottom Boot Block Bank Division 17 = 8Mbits + 8Mbits Organization x16 Operating Voltage Range 2.7V to 3.6V Table 1. PRODUCT LINE-UP Part No. Vcc Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) 70ns 70ns 25ns -7 -8 2.7V~3.6V 80ns 80ns 25ns 90ns 90ns 35ns -9 Table 2. K8D1716U DEVICE BANK DIVISIONS Device Part Number K8D1716U Bank 1 Mbit 8 Mbit Block Sizes Eight 8 Kbyte/4 Kword, fifteen 64 Kbyte/32 Kword Mbit 8 Mbit Bank 2 Block Sizes Sixteen 64 Kbyte/32 Kword 4 Revision 0.0 July 2004 K8D1716UTB / K8D1716UBB Table 3. Top Boot Block Address (K8D1716UT) K8D17.


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