Transistors. 2SC5865 Datasheet

2SC5865 Transistors. Datasheet pdf. Equivalent

2SC5865 Datasheet
Recommendation 2SC5865 Datasheet
Part 2SC5865
Description Transistors
Feature 2SC5865; www.DataSheet4U.com 2SC5865 Transistors High voltage discharge, High speed switching, Low Noise (6.
Manufacture Rohm
Datasheet
Download 2SC5865 Datasheet




Rohm 2SC5865
www.DataSheet4U.com
Transistors
2SC5865
High voltage discharge, High speed switching,
Low Noise (60V, 1A)
2SC5865
zFeatures
1) High speed switching. ( Tf : Typ. : 50ns at IC=1.0A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC=500mA, IB=50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
zApplications
High speed switching, Low noise
zStructure
NPN silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
2SC5865
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) Base
(2) Emitter
(3) Collector
0~0.1
(1) (2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VU
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
Tstg
1 Pw=10ms
2 Each terminal mounted on a recommended land
Limits
60
60
6
1.0
2.0
500
150
55 to +150
Unit
V
V
V
A
A 1
mW 2
°C
°C
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Rohm 2SC5865
Transistors
2SC5865
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturatioin voltage VCE(sat)
DC current gain
hFE
Transistor frequency
fT
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Fall time
tf
Min.
60
60
6
120
1 Non repetitive pulse
2 See switching characteristics measurement circuits
Typ.
200
250
10
50
130
50
Max.
1.0
1.0
500
390
Unit Conditions
V IC=1mA
V IC=100µA
V IE=100µA
µA VCB=40V
µA VEB=4V
mV IC=500mA, IB=50mA
VCE=2V, IC=100mA
MHz VCE=10V, IE= 100mA, f=10MHz1
pF VCB=10V, IE=0mA, f=1MHz
ns IC=1A,
ns
IB1=100mA
IB2= 100mA
ns VCC 25V 2
zhFE RANK
Q
120-270
R
180-390
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Rohm 2SC5865
Transistors
zElectrical characteristics curves
200
IB=500µA
160
450µA
400µA
120 350µA
300µA
250µA
80
200µA
150µA
40 100µA
50µA
0 0µA
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics
10
10ms 1ms 500µs
100µs
1
DC
500ms
0.1
100ms
0.01
Single non repetitive pulse
0.001
0.1 1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Safe operating area
2SC5865
1000
100
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
Tf
Ton
10
0.01
0.1 1
COLLECTOR CURRENT : IC (A)
Fig.3 Switching Time
10
1000
Ta=125°C
VCE=2V
100 Ta= −40°C Ta=25°C
10
1
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.4 DC current gain
vs. collector current ( Ι )
1000
100
VCE=2V
Ta=25°C
VCE=5V
VCE=3V
10
1
IC/IB=10/1
10
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain
vs. collector current ( ΙΙ )
Ta=125°C
0.1
Ta=25°C
Ta= −40°C
0.01
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )
10
Ta=25°C
1
IC/IB=100/1
0.1
IC/IB=20/1
0.01
0.001
IC/IB=10/1
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10 1000
IC/IB=10/1
Ta=25°C
VCE=10V
Ta= −40°C
1
Ta=125°C
Ta=25°C
100
10
0.1
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.8 Base-emitter saturation voltage
vs. collector current
1
0.001
0.01 0.1
1
EMITTER CURRENT : IE (A)
10
Fig.9 Transition frequency
3/4







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