2SC5865

www.DataSheet4U.com 2SC5865 Transistors High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 zFeatures 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SA2092. zDimensions (Unit : mm) TSMT3 2.9 0.4 (3) 1.6 2.8 1.0MAX 0.85 0.7 0~0.1 0.3~0.6 (1) (2) 0.95 0.95 zApplications High speed switching, Low noise (1) Base (2) Emitter (3) Collector 1.9 0.16 Each lead has same dimensions Abbreviated symbol : VU zStructure NPN silicon epitaxial planar transistor zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SC5865 Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 1.0 2.0 500 150 −55 to +150 Unit V V V A A ∗1 mW ∗2 °C °C ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land 1/4 2SC5865 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Min. 60 60 6 − − − 120 − − − − − Typ. − − − − − 200 − 250 10 50 130 50 Max. − − − 1.0 1.0 500 390 − − − − − Unit V V V µA µA mV − MHz pF ns ns ns IC=1mA IC=100µA IE=100µA VCB=40V VEB=4V IC=500mA, IB=50mA VCE=2V, IC=100mA VCE=1...