2SC5865 Transistors Datasheet

2SC5865 Datasheet, PDF, Equivalent


Part Number

2SC5865

Description

Transistors

Manufacture

Rohm

Total Page 5 Pages
Datasheet
Download 2SC5865 Datasheet


2SC5865
www.DataSheet4U.com
Transistors
2SC5865
High voltage discharge, High speed switching,
Low Noise (60V, 1A)
2SC5865
zFeatures
1) High speed switching. ( Tf : Typ. : 50ns at IC=1.0A)
2) Low saturation voltage, typically.
(Typ. : 200mV at IC=500mA, IB=50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Low Noise.
5) Complements the 2SA2092.
zApplications
High speed switching, Low noise
zStructure
NPN silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
2SC5865
zDimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) Base
(2) Emitter
(3) Collector
0~0.1
(1) (2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Abbreviated symbol : VU
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
Tstg
1 Pw=10ms
2 Each terminal mounted on a recommended land
Limits
60
60
6
1.0
2.0
500
150
55 to +150
Unit
V
V
V
A
A 1
mW 2
°C
°C
1/4

2SC5865
Transistors
2SC5865
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector-emitter saturatioin voltage VCE(sat)
DC current gain
hFE
Transistor frequency
fT
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Fall time
tf
Min.
60
60
6
120
1 Non repetitive pulse
2 See switching characteristics measurement circuits
Typ.
200
250
10
50
130
50
Max.
1.0
1.0
500
390
Unit Conditions
V IC=1mA
V IC=100µA
V IE=100µA
µA VCB=40V
µA VEB=4V
mV IC=500mA, IB=50mA
VCE=2V, IC=100mA
MHz VCE=10V, IE= 100mA, f=10MHz1
pF VCB=10V, IE=0mA, f=1MHz
ns IC=1A,
ns
IB1=100mA
IB2= 100mA
ns VCC 25V 2
zhFE RANK
Q
120-270
R
180-390
2/4


Features www.DataSheet4U.com 2SC5865 Transistors High voltage discharge, High speed sw itching, Low Noise (60V, 1A) 2SC5865 zF eatures 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low satur ation voltage, typically. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong di scharge power for inductive load and ca pacitance load. 4) Low Noise. 5) Comple ments the 2SA2092. zDimensions (Unit : mm) TSMT3 2.9 0.4 (3) 1.6 2.8 1.0MAX 0 .85 0.7 0~0.1 0.3~0.6 (1) (2) 0.95 0.95 zApplications High speed switchin g, Low noise (1) Base (2) Emitter (3) Collector 1.9 0.16 Each lead has sam e dimensions Abbreviated symbol : VU zStructure NPN silicon epitaxial planar transistor zPackaging specifications Package Type Code Basic ordering unit ( pieces) 2SC5865 Taping TL 3000 zAbsolu te maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitt er voltage Emitter-base voltage Collect or current Power dissipation Junction t emperature Range of storage temperature Symbol VCBO VCEO VEBO IC.
Keywords 2SC5865, datasheet, pdf, Rohm, Transistors, SC5865, C5865, 5865, 2SC586, 2SC58, 2SC5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)