FCA47N60 N-Channel MOSFET Datasheet

FCA47N60 Datasheet, PDF, Equivalent


Part Number

FCA47N60

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FCA47N60 Datasheet


FCA47N60
FCA47N60 / FCA47N60_F109
N-Channel SuperFET® MOSFET
June 2014
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg= 210 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
• 100% Avalanche Tested
Application
• Solar Invertor
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D
G
D
S
TO-3PN
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
FCA47N60
FCA47N60_F109
600
47
29.7
141
± 30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
Typ.
--
--
Max.
0.3
41.7
Unit
°C/W
°C/W
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C3
1
www.fairchildsemi.com

FCA47N60
Package Marking and Ordering Information
Device Marking
FCA47N60
FCA47N60
Device
FCA47N60
FCA47N60_F109
Package
TO-3PN
TO-3PN
Reel Size
-
-
Tape Width
-
-
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSSF
IGSSR
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA, TJ = 25°C
VGS = 0 V, ID = 250 μA, TJ = 150°C
ID = 250 μA, Referenced to 25°C
VGS = 0 V, ID = 47 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Min.
600
--
--
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
VGS(th)
Forward Transconductance
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 23.5 A
VDS = 40 V, ID = 23.5 A
VDS = VGS, ID = 250 μA
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
--
--
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 47 A
RG = 25 Ω
VDS = 480 V, ID = 47 A
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 47 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 47 A
dIF/dt =100 A/μs
(Note 4)
--
--
--
--
--
Notes:
1. Repetitive Rating: Pulse-width limited by maximum junction temperature.
2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C
3. ISD 47 A, di/dt 200 A/μs, VDD = 380 V, starting TJ = 25°C
4. Essentially independent of operating temperature typical characteristics.
Typ.
--
650
0.6
700
--
--
--
--
3.0
--
--
3.0
5900
3200
250
160
420
185
210
520
75
210
38
110
--
--
--
590
25
Quantity
30
30
Max. Unit
-- V
-- V
-- V/°C
--
1
10
100
-100
V
μA
μA
nA
nA
--
0.058
40
--
5.0
0.07
--
5.0
8000
4200
--
--
--
pF
pF
pF
pF
pF
430
450
1100
160
270
--
--
ns
ns
ns
ns
nC
nC
nC
47 A
141 A
1.4 V
-- ns
-- μC
©2010 Fairchild Semiconductor Corporation
FCA47N60 / FCA47N60_F109 Rev. C3
2
www.fairchildsemi.com


Features FCA47N60 / FCA47N60_F109 — N-Channel S uperFET® MOSFET FCA47N60 / FCA47N60_F 109 N-Channel SuperFET® MOSFET June 2 014 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Ca pacitance (Typ. Coss(eff.) = 420 pF) 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply Description SuperFET® MOSFET is Fairc hild Semiconductor’s first generation of high voltage super-junction (SJ) MO SFET family that is utilizing charge ba lance technology for outstanding low on resistance and lower gate charge perfor mance. This technology is tailored to m inimize conduction loss, provide superi or switching performance, dv/dt rate an d higher avalanche energy. Consequently , SuperFET MOSFET is very suitable for the switching power applications such a s PFC, server/telecom power, FPD TV pow er, ATX power and industrial power appl ications. D G D S TO-3PN Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR .
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