FCH47N60 N-Channel MOSFET Datasheet

FCH47N60 Datasheet, PDF, Equivalent


Part Number

FCH47N60

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FCH47N60 Datasheet


FCH47N60
FCH47N60
N-Channel SuperFET® MOSFET
600 V, 47 A, 70 mΩ
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 58 mΩ
• Ultra Low Gate Charge (Typ. Qg = 210 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Solar Inverter
• AC-DC Power Supply
December 2013
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D
G
D
S
TO-247
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Parameter
Drain to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25°C)
Derate Above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCH47N60_F133
600
47
29.7
141
±30
1800
47
41.7
4.5
417
3.33
-55 to +150
300
FCH47N60_F133
0.3
0.24
41.7
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
1
www.fairchildsemi.com

FCH47N60
Package Marking and Ordering Information
Part Number
FCH47N60_F133
Top Mark
FCH47N60
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-to-Body Leakage Current
VGS = 0 V, ID = 250 μA, TC = 25°C
VGS = 0 V, ID = 250 μA, TC = 150°C
ID = 250 μA, Referenced to 25°C
600
-
-
VGS = 0 V, ID = 47 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = ±30 V, VDS = 0 V
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain-to-Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 23.5 A
VDS = 40 V, ID = 23.5 A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss(eff.)
Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0 V to 400 V, VGS = 0 V
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay
Turn-On Rise Time
Turn-Off Delay
Turn-Off Fall Time
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 300 V, ID = 47 A,
VGS = 10 V, RG = 25 Ω
VDS = 480 V, ID = 47 A,
VGS = 10 V
(Note 4)
(Note 4)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-to-Source Diode Forward Current
ISM Maximum Pulsed Drain-to-Source Diode Forward Current
VSD Drain-to-Source Diode Forward Voltage VGS = 0 V, ISD = 47 A
trr Reverse-Recovery Time
Qrr Reverse-Recovery Charge
VGS = 0 V, ISD = 47 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 18 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 48 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-
-
-
-
-
Typ. Max. Unit
- -V
650 - V
0.6 - V/°C
700 - V
-
-
1
10
μA
- ±100 nA
-
0.058
40
5.0
0.070
-
V
Ω
S
5900
3200
250
160
420
8000
4200
-
-
-
pF
pF
pF
pF
pF
185 430 ns
210 450 ns
520 1100 ns
75 160 ns
210 270 nC
38 - nC
110 - nC
- 47 A
- 141 A
- 1.4 V
590 - ns
25 - μC
©2009 Fairchild Semiconductor Corporation
FCH47N60 Rev. C2
2
www.fairchildsemi.com


Features FCH47N60 — N-Channel SuperFET® MOSFET FCH47N60 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg = 2 10 nC) • Low Effective Output Capacit ance (Typ. Coss(eff.) = 420 pF) • 100 % Avalanche Tested • RoHS Compliant A pplications • Solar Inverter • AC-D C Power Supply December 2013 Descripti on SuperFET® MOSFET is Fairchild Semic onductor’s first generation of high v oltage super-junction (SJ) MOSFET famil y that is utilizing charge balance tech nology for outstanding low onresistance and lower gate charge performance. Thi s technology is tailored to minimize co nduction loss, provide superior switchi ng performance, dv/dt rate and higher a valanche energy. Consequently, SuperFET MOSFET is very suitable for the switch ing power applications such as PFC, ser ver/telecom power, FPD TV power, ATX po wer and industrial power applications. D G D S TO-247 G MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol VD.
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