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SST13LP02 Dataheets PDF



Part Number SST13LP02
Manufacturers SST
Logo SST
Description Dual-Band Power Amplifier
Datasheet SST13LP02 DatasheetSST13LP02 Datasheet (PDF)

www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Preliminary Specifications Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz • High linear output power: – >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz – Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz – Meets 802.11g OFDM ACPR requirement up to 22 dBm.

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www.DataSheet4U.com 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Preliminary Specifications Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz • High linear output power: – >25 dBm P1dB (Pulsed single-tone signal) across 2.4-2.5 GHz – Meets 802.11b OFDM ACPR requirement up to 21.5 dBm across 2.4-2.5 GHz – Meets 802.11g OFDM ACPR requirement up to 22 dBm across 2.4-2.5 GHz – Added EVM~4% up to 19 dBm for 54 Mbps 802.11g signal across 2.4-2.5 GHz – >25 dBm P1dB (Pulsed single-tone signal) across 4.9-5.8 GHz – Meets 802.11a OFDM ACPR requirement up to 22 dBm across 4.9-5.8GHz – Added EVM~4% up to 18 dBm for 54 Mbps 802.11a signal across 4.9-5.8GHz • High power-added efficiency/Low operating current for 802.11a/b/g applications – ~220 mA @ POUT = 22 dBm for 802.11g – ~205 mA @ POUT = 21.5 dBm for 802.11b – ~380 mA @ POUT = 22 dBm for 802.11a • Built-in Ultra-low IREF power-up/down control – IREF <2 mA • Low idle current – ~55 mA ICQ (802.11b/g) – ~135 mA ICQ (802.11a) • High-speed power-up/down – Turn on/off time (10%-90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~2/1 dB gain/power variation between 0°C to +85°C across 2.4-2.5 GHz – ~8/2 dB gain/max linear power variation between 0°C to +85°C across 4.9-5.8 GHz – ~1 dB detector variation over 0°C to +85°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 24-lead WQFN (4mm x 4mm) – Non-Pb (lead-free) packages available Applications: • • • • • • WLAN (IEEE 802.11a/g/b) Japanese WLAN HyperLAN2 Multimedia Home RF Cordless phones Product Description The SST13LP02 is a high-efficiency, dual-band power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST13LP02 can be easily configured for high-power applications with superb power-added efficiency while operating over the 802.11a/b/g frequency band for U.S., European, and Japanese markets (2.4-2.5 GHz and 4.95.8 GHz). The SST13LP02 has excellent linearity, typically ~4% added EVM at 19 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 22 dBm and 802.11b spectrum mask at 21.5 dBm. For 802.11a operation, the SST13LP02 has demonstrated typically ~4% added EVM at 18 dBm output power while meeting 802.11a spectrum mask at 22 dBm. The ©2006 SST Communications Corp. S71304-01-000 9/06 1 SST13LP02 also has wide-range (>15 dB), temperaturestable (~1.5 dB over 85°C), single-ended power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra-low reference current (total IREF <2 mA) makes the SST13LP02 controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST13LP02 ideal for the final stage power amplification in both batterypowered 802.11a/b/g WLAN transmitters and access point applications. The SST13LP02 is offered in a 24-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Functional Blocks VREF_LB VCC1_LB Det_LB NC NC 20 24 NC RFIN_LB GND GND RFIN_HB VREF_HB 1 2 3 4 5 6 HB Bias Circuit 23 22 21 19 18 17 16 15 14 13 RFOUT_LB GND GND RFOUT_HB RFOUT_HB RFOUT_HB LB Bias Circuit 7 VCC1_HB 8 NC 9 VCC2_HB 10 NC 11 NC 12 Det_HB 1304 B1.1 FIGURE 1: Functional Block Diagram ©2006 SST Communications Corp. NC S71304-01-000 9/06 2 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Pin Assignments VREF_LB VCC1_LB Det_LB NC NC 20 24 NC RFIN_LB GND GND RFIN_HB VREF_HB 1 2 3 4 5 6 7 VCC1_HB 23 22 21 19 18 RFOUT_LB GND GND RFOUT_HB RFOUT_HB RFOUT_HB NC 17 16 15 14 13 12 Det_HB 1304 P1.1 Top View (contacts facing down) RF and DC GND 0 8 NC 9 VCC2_HB 10 NC 11 NC FIGURE 2: Pin Assignments for 16-contact WQFN ©2006 SST Communications Corp. S71304-01-000 9/06 3 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications Pin DescriptionS TABLE 1: Pin Description Symbol GND NC RFin_LB GND GND RFin_HB VREF_HB Vcc1_HB NC Vcc2_HB NC NC Det_HB RFout_HB RFout_HB RFout_HB GND GND RFout_LB NC NC Det_LB NC VREF_LB Vcc1_LB Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 No Connection Power Supply Power Supply PWR PWR Power Supply Power Supply Power Supply Ground Ground Power Supply No Connection No Connection O Power Supply Power Supply No Connection Power Supply No Connec.


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