FDB2614 — N-Channel PowerTrench® MOSFET
November 2013
FDB2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A High Performance Trench technology for Extremely Low
RDS(on)
Low Gate Charge High Power and Current Handing Capability
General Description
This N-Channel MOSFET is producedusing F...
