SST32HF162

www.DataSheet4U.com Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM – SST32HF164: 1M x16 Flash + 256K x16 SRAM Single 2.7-3.3V Read and Write Operations Concurrent Operation – Read from or write to SRAM while Erase/Program Flash Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical) Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks Fast Read Access Times: – Flash: 70 ns and 90 ns – SRAM: 70 ns and 90 ns Latched Address and Data for Flash Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF802: 8 seconds (typical) SST32HF162/164: 15 seconds (typical) Flash Automatic Erase and Program Timing – Internal VPP Generation Flash End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Package Available – 48-lead TSOP (12mm x 20mm) – 48-ball TBGA (10mm x 12mm) PRODUCT DESCRIPTION The SST32HF802/162/164 ComboMemory devices integrate a 512K x16 ...