STB160NF03L

www.DataSheet4U.com N-CHANNEL 30V - 0.0021Ω - 160A D2PAK STripFET™ POWER MOSFET TYPE STB160NF03L s s s s s STB160NF03L VDSS 30 V RDS(on) < 0.0030 Ω ID 160 A TYPICAL RDS(on) = 0.0021Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE VERY LOW GATE CHARGE 100% AVALANCHE TESTED 3 1 D2PAK (TO-263) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density with ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs s DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(1) ID IDM (q) PTOT EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ±15 160 113 640 300 2 2 –65 to 175 175 (1) Limited by Package (2) I SD ≤100A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C J °C °C (q) Pulse width limited by safe operating ...