STB160NF3LL

www.DataSheet4U.com N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET™ II POWER MOSFET TYPE ST160NF3LL s s s s s s STB160NF3LL PRELIMINARY DATA VDSS 30 V RDS(on) <0.003 Ω ID 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE 100% AVALANCHE TESTED SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 D2PAK TO-263 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(∗) ID IDM() Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Value 30 30 ± 15 160 160 640 300 2 1.2 -55 to 175 (1) Starting Tj = 25 oC, ID = 80A, VDD = 20V Unit V V V A A A W W/°C J °C Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature () Pulse width limited by saf...