STB16NS25

www.DataSheet4U.com STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY™ MOSFET TYPE STB16NS25 s s s VDSS 250 V RDS(on) < 0.28 Ω ID 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj February 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 16 11 64 140 1 5 –65 to 175 175 (1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX Unit V V V A A A W W/°C V/ns °C °C 1/9 ()Pulse width limited by safe operating area STB16NS25 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Te...