STB16PF06L

www.DataSheet4U.com STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET™ MOSFET Table 1: General Features TYPE STB16PF06L s s s Figure 1: Package ID 16 A Pw 70 W VDSS 60 V RDS(on) < 0.125 Ω TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE 3 1 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-263 Figure 2: Internal Schematic Diagram APPLICATIONS s MOTOR CONTROL s DC-DC CONVERTERS Table 2: Order Codes PART NUMBER STB16PF06LT4 MARKING B16PF06L PACKAGE D2PAK PACKAGING TAPE & REEL Rev. 1 September 2004 1/10 STB16PF06L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 60 60 ± 16 16 11.4 64 70 0.4 20 250 - 55 to 175 Unit V V V A A A W W/°C V/ns mJ °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting T...